MPSA75
MPSA76
MPSA77
www.centralsemi.com
DESCRIPTION:
SILICON
The CENTRAL SEMICONDUCTOR MPSA75 series
PNP DARLINGTON TRANSISTORS
devices are silicon PNP Darlington transistors,
manufactured by the epitaxial planar process, designed
for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL MPSA75 MPSA76 MPSA77 UNITS
A
Collector-Base Voltage V 40 50 60 V
CBO
Collector-Emitter Voltage V 40 50 60 V
CES
Emitter-Base Voltage V 10 V
EBO
Continuous Collector Current I 500 mA
C
Power Dissipation P 625 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 200 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C) MPSA75 MPSA76 MPSA77
A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
I V=30V - 100 - - - - nA
CBO CB
I V=40V - - - 100 - - nA
CBO CB
I V=50V - - - - - 100 nA
CBO CB
I V=30V - 500 - - - - nA
CES CE
I V=40V - - - 500 - - nA
CES CB
I V=50V - - - - - 500 nA
CES CB
I V =10V - 100 - 100 - 100 nA
EBO EB
BV I=100A 40 - 50 - 60 - V
CBO C
BV I=100A 40 - 50 - 60 - V
CES C
V I =100mA, I=0.1mA - 1.5 - 1.5 - 1.5 V
CE(SAT) C B
V V =5.0V, I=100mA - 2.0 - 2.0 - 2.0 V
BE(ON) CE B
h V =5.0V, I=10mA 10K - 10K - 10K -
FE CE C
h V =5.0V, I=100mA 10K - 10K - 10K -
FE CE C
f V =5.0V, I=10mA 125 - 125 - 125 - MHz
T CE C
R1 (18-March 2014)MPSA75
MPSA76
MPSA77
SILICON
PNP DARLINGTON TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (18-March 2014)
www.centralsemi.com