X-On Electronics has gained recognition as a prominent supplier of CJQ4438 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJQ4438 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJQ4438 Changjing Electronics Technology

CJQ4438 electronic component of Changjing Electronics Technology
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Part No.CJQ4438
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Trench 60V 8.2A 3V @ 250uA 22 mΩ @ 8.2A,10V SOP-8_150mil RoHS
Datasheet: CJQ4438 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3237 ea
Line Total: USD 0.32 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the CJQ4438 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJQ4438 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 I V R MAX D (BR)DSS DS(on) 10V 22 m 6 0 V 8.2A 4.5V 36m APPLICATION FEATURE z Load Switch z TrenchFET Power MOSFET z PWM applications z Low R (on) DS z Low Gate Charge Equivalent Circuit MARKING Q4438 = Device code Solid dot=Pin1 indicator Q4438 Q4438 Solid dot = Green molding compound device, YY YY if none, the normal device YY=Date Code Front side Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current (note 1) I 8.2 A D Pulsed Drain Current (note 2) I 40 A DM Power Dissipation P 1.25 W D Thermal Resistance from Junction to Ambient (note 1) R 100 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG www.cj-elec.com 1 I,May,2015 unless otherwise specified Ta =25 Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250A 60 V Zero gate voltage drain current IDSS VDS =60V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage VGS(th) VDS =V , ID =250A 1 3 V GS VGS =10V, ID =8.2A 22 m Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =7.6A 36 m Forward tranconductance (note 3) gfs VDS =5V, ID =8.2A 10 S Diode forward voltage (note 3) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 4) Input Capacitance C 2300 pF iss Output Capacitance C VDS =30V,VGS =0V,f =1MHz 155 pF oss Reverse Transfer Capacitance C 116 pF rss SWITCHING PARAMETERS (note 4) Turn-on delay time td(on) 8.2 ns Turn-on rise time tr V =10V,V =30V 5.5 ns GS DS R =3.6,R =3 Turn-off delay time td(off) L GEN 29.7 ns Turn-off fall time tf 5.2 ns Total Gate Charge (10V) 58 nC Q g Total Gate Charge (4.5V) 30 nC VDS =30V,VGS =10V,ID =8.2A Gate-Source Charge Q 6 nC gs Gate-Drain Charge Q 14.4 nC gd Notes : 2 1. The value of R is measured with the device mounted on 1 in FR4 board with 2oz. Copper, in a still air environment with JA T =25.The value in any given application depends on the users specific board design. The current rating is based on a the t 10s thermal resistance rating. 2. Repetitive rating : Pulse width limited by junction temperature. 3. Pulse Test : Pulse Width300s, Duty Cycle2%. 4. These parameters have no way to verify. www.cj-elec.com 2 I,May,2015 026)(7 (/(&75,& / &+ 5 &7(5,67,&6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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