JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 I V R MAX D (BR)DSS DS(on) 10V 22 m 6 0 V 8.2A 4.5V 36m APPLICATION FEATURE z Load Switch z TrenchFET Power MOSFET z PWM applications z Low R (on) DS z Low Gate Charge Equivalent Circuit MARKING Q4438 = Device code Solid dot=Pin1 indicator Q4438 Q4438 Solid dot = Green molding compound device, YY YY if none, the normal device YY=Date Code Front side Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current (note 1) I 8.2 A D Pulsed Drain Current (note 2) I 40 A DM Power Dissipation P 1.25 W D Thermal Resistance from Junction to Ambient (note 1) R 100 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG www.cj-elec.com 1 I,May,2015 unless otherwise specified Ta =25 Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250A 60 V Zero gate voltage drain current IDSS VDS =60V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage VGS(th) VDS =V , ID =250A 1 3 V GS VGS =10V, ID =8.2A 22 m Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =7.6A 36 m Forward tranconductance (note 3) gfs VDS =5V, ID =8.2A 10 S Diode forward voltage (note 3) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 4) Input Capacitance C 2300 pF iss Output Capacitance C VDS =30V,VGS =0V,f =1MHz 155 pF oss Reverse Transfer Capacitance C 116 pF rss SWITCHING PARAMETERS (note 4) Turn-on delay time td(on) 8.2 ns Turn-on rise time tr V =10V,V =30V 5.5 ns GS DS R =3.6,R =3 Turn-off delay time td(off) L GEN 29.7 ns Turn-off fall time tf 5.2 ns Total Gate Charge (10V) 58 nC Q g Total Gate Charge (4.5V) 30 nC VDS =30V,VGS =10V,ID =8.2A Gate-Source Charge Q 6 nC gs Gate-Drain Charge Q 14.4 nC gd Notes : 2 1. The value of R is measured with the device mounted on 1 in FR4 board with 2oz. Copper, in a still air environment with JA T =25.The value in any given application depends on the users specific board design. The current rating is based on a the t 10s thermal resistance rating. 2. Repetitive rating : Pulse width limited by junction temperature. 3. Pulse Test : Pulse Width300s, Duty Cycle2%. 4. These parameters have no way to verify. www.cj-elec.com 2 I,May,2015 026)(7 (/(&75,& / &+ 5 &7(5,67,&6