8050S Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C J (T TO-92 8050S TRANSISTOR (NPN) FEATURES 1.EMITTER z Complimentary to 8550S 2.COLLECTOR z Collector Current: I =0.5A C 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 0.5 A C P Collector Power Dissipation 0.625 W C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = 100A, I =0 40 V (BR)CBO C E Collector-emitter breakdown voltage V I = 0.1mA, I=0 25 V (BR)CEO C B Emitter-base breakdown voltage V I = 100A, I=0 5 V (BR)EBO E C Collector cut-off current I V = 40 V , I=0 0.1 A CBO CB E Collector cut-off current I V = 20 V , I=0 0.1 A CEO CE B Emitter cut-off current I V = 5V, I=0 0.1 A EBO EB C h V = 1V, I = 50mA 85 400 FE(1) CE C DC c urrent gain h V = 1V, I = 500mA 50 FE(2) CE C Collector-emitter saturation voltage V(sat) I =500mA, I=50mA 0.6 V CE C B Base-emitter saturation voltage V(sat) I =500mA, I=50mA 1.2 V BE C B V = 6V, I =20mA CE C Transition frequency f 150 MHz T f =30MHz CLASSIFICATION OF h FE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014C,Dec,2015 Typical Characteristics Static Charact eristic h I FE C 1000 100 COMMON EMITTER COMMON V =1V CE 480uA EMITTER T =25 a 80 420uA T =100 a 360uA 60 300uA T =25 a 100 240uA 40 180uA 120uA 20 I =60uA B 10 0 113 0 30100 500 04 8 12 16 20 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) C CE V I V I CEsat C BEsat C 500 2000 300 1000 T =25 a 100 T =100 a T =100 a T =25 30 a =10 =10 10 100 30 1 3 10 30 100 500 1 3 10 100 500 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C f I I V T C C BE 100 1000 COMMON EMITTER COMMON EMITTER V =1V V =6V CE CE 30 T =25 a 300 10 T =100 a 100 3 T =25 a 1 0.3 0.1 10 2 0.0 0.2 0.4 0.6 0.8 1.0 10 30 100 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (V) C BE C / C V / V P T ob ib CB EB C a 750 100 f=1MHz I =0/ I =0 E C 625 T =25 a C ib 30 500 10 C 375 ob 250 3 125 1 0 0.1 0.3 1 3 10 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014C,Dec,2015 CAPACITANCE C (pF) COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION C VOLTAGE V (mV) COLLECTOR CURRENT I CEsat (mA) C DC CURRENT GAIN h FE TRANSITION FREQUENCY f (MHz) BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION T VOLTAGE V (mV) P (mW) BEsat C