Product Information

CJAC80SN10

Name: CJAC80SN10
Brand: Changjing Electronics Technology
SKU: CJAC80SN10_ChangjingElectronicsTechnology
Availability: OutOfStock
Rating: 5 (11 reviews)

CJAC80SN10 electronic component of Changjing Electronics Technology

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Datasheet

100V 80A 6.2mΩ@10V,20A 100W 1.9V@250uA 4.5pF@50V N Channel 2100pF@50V 50nC@10V -55℃~+150℃@(Tj) PDFNWB5x6-8L MOSFETs ROHS

Manufacturer: Changjing Electronics Technology

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9129 ea
Line Total: USD 0.91

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Wed. 05 Jun MOQ : 1 Multiples : 1 CJAC80SN10 Changjing Electronics Technology	1 : USD 0.9164 10 : USD 0.7751 30 : USD 0.7024 100 : USD 0.6318 500 : USD 0.5652 1000 : USD 0.5424

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Additional Infomation About Product

CJAC80SN10 manufactured by Changjing Electronics Technology is an N-Channel MOSFET with 100V of drain-source voltage, 80A of drain-source current, 6.2mO@10V of on-resistance, 20A of continuous drain current, 100W of power dissipation, 1.9V@250uA of gate-source threshold voltage, 4.5pF@50V of gate-source capacitance, 2100pF@50V of drain-source capacitance, 50nC@10V of reverse transfer capacitance, a PDFNWB5x6-8L surface mount package and an operating temperature range of -55? ~+150?@(Tj). It is ROHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Changjing Electronics Technology may also be referenced as

Jiangsu Changjing Electronics Technology Co., Ltd.

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Manufacturer Changjing Electronics Technology Changjing Electronics Technology
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 80 A 80 A
Drain Source On Resistance Rdson@Vgs Id 6.2 mOhms @10V , 20A 6.2 mOhms @10V , 20A
Power Dissipation Pd 100 W 100 W
Gate Threshold Voltage Vgsth@Id 1.9 V @250uA 1.9 V @250uA
Reverse Transfer Capacitance Crss@Vds 4.5 pF @50V 4.5 pF @50V
Type N Channel N Channel
Input Capacitance Ciss@Vds 2100 pF @50V 2100 pF @50V
Total Gate Charge Qg@Vgs 50 nC @10V 50 nC @10V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)