JIANGSU CHANGJING ELEJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGYCTRONICS TECHNOLOGY CO., L CO., LTD TD SOT-563 Plastic-Encapsulate MOSFETS CJX3439K N Channel +P Channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-563 4.5 V 380m 2 0 V 450m 2.5V 0.75 A 800m 1.8V 520m -4.5 V -20 700m -2.5V V -0.66 A 950m(TYP) -1.8V FEATURE APPLICATION z Surface Mount Package z Load/ Power Switching z Low R (on) DS z Interfacing Switching z Operated at Low Logic Level Gate Drive z Battery Management for Ultra Small Portable Electronics z ESD Protected Gate z Logic Level Shift z Including a N-ch CJ3134K and a P-ch CJ3139K (independently) In a Package Equivalent Circuit MARKING S2 D1 G2 5 4 6 1 2 3 S1 G1 D2 ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Unit Parameter Value N-MOSFET Drain-Source Voltage V 20 V DS Typical Gate-Source Voltage V 12 V GS Continuous Drain Current (note 1) I 0.75 A D Pulsed Drain Current (tp=10us) I 1.8 A DM P-MOSFET Drain-Source Voltage V -20 V DS 12 Typical Gate-Source Voltage V V GS Continuous Drain Current (note 1) I -0.66 A D Pulsed Drain Current (tp=10us) I -1.2 A DM Temperature and Thermal Resistance Thermal Resistance from Junction to Ambient (note 1) R 833 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L Rev. - 1.0 www.jscj-elec.com 1MOSFET ELECTRICAL CHARACTERISTICS N-ch MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 A Gate-body leakage current I V =10V, V = 0V 20 uA GSS GS DS Gate threshold voltage (note 2) VGS(th) VDS =V , ID =250A 0.35 1.1 V GS VGS =4.5V, ID =0.65A 380 m Drain-source on-resistance(note 2) RDS(on) VGS =2.5V, ID =0.55A 450 m VGS =1.8V, ID =0.45A 800 m Forward tranconductance(note 2) gFS VDS =10V, ID =0.8A 1.6 S 1.2 Diode forward voltage V I =0.15A, VGS = 0V V SD S DYNAMIC CHARACTERISTICS (note 4) 120 Input Capacitance C 79 pF iss 20 pF Output Capacitance C VDS =16V,VGS =0V,f =1MHz 13 oss 15 pF Reverse Transfer Capacitance C 9 rss SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time td(on) 6.7 ns Turn-on rise time tr 4.8 ns V =4.5V,V =10V, GS DS I =500mA,R =10 Turn-off delay time td(off) D GEN 17.3 ns T f 7.4 ns urn-off fall time t P-ch MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 20 uA Gate threshold voltage (note 2) VGS(th) VDS =V , ID =-250A -0.35 -1.1 V GS 270 VGS =-4.5V, ID =-1A 520 m Drain-source on-resistance(note 2) RDS(on) 320 VGS =-2.5V, ID =-0.8A 700 m VGS =-1.8V, ID =-0.5A 950 m Forward tranconductance(note 2) gFS VDS =-10V, ID =-0.54A 1.2 S Diode forward voltage V I =-0.5A, VGS = 0V -1.2 V SD S DYNAMIC CHARACTERISTICS (note 4) 170 Input Capacitance C 113 pF iss 25 pF Output Capacitance C VDS =-16V,VGS =0V,f =1MHz 15 oss 15 pF Reverse Transfer Capacitance C 9 rss SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time td(on) 9 ns Turn-on rise time tr 5.8 ns V =-4.5V,V =-10V, GS DS I =-200mA,R =10 Turn-off delay time td(off) D GEN 32.7 ns Turn-off fall time tf 20.3 ns Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by designnot subject to producting. Rev. - 1.0 www.jscj-elec.com 2