JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC ( T UMX1N DUAL TRANSISTOR (NPN+NPN) FEATURES SOT-363 z Two 2SC2412K chips in a SOT-563 package z Mounting possible with SOT-563 automatic mounting machines z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half MARKING:X1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 7 V EBO Collector Current -Continuous 150 mA I C Collector Power Dissipation 150 mW P C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V I =50A,I=0 60 V (BR)CBO C E V I =1mA,I=0 50 V Collector-emitter breakdown voltage (BR)CEO C B Emitter-base breakdown voltage V I =50A,I=0 7 V (BR)EBO E C Collector cut-off current I V =60V,I=0 0.1 A CBO CB E Emitter cut-off current I V =7V,I=0 0.1 A EBO EB C DC current gain h V =6V,I=1mA 120 560 FE CE C V I =50mA,I=5mA 0.4 V Collector-emitter saturation voltage CE(sat) C B Transition frequency f V =12V,I=2mA,f=100MHz 180 MHz T CE C Collector output capacitance C V =12V,I=0,f=1MHz 2.0 3.5 pF ob CB E www.cj-elec.comwww.cj-elec.com 1 C,Oct,2014 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650 TYP 0.026 TYP e1 1.200 1.400 0.047 0.055 L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 0 8 0 8 www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014 C,Oct,2014