Product Information

1N4148WT-HF

1N4148WT-HF electronic component of Comchip

Datasheet
Diodes - General Purpose Power Switching DIODE SWITCHING 100V 150mA 150mW SOD-523

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3519 ea
Line Total: USD 0.35

32185 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19903 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

1N4148WT-HF
Comchip

1 : USD 0.253
10 : USD 0.1725
100 : USD 0.0713
1000 : USD 0.0495
3000 : USD 0.0403
9000 : USD 0.0368
24000 : USD 0.0345
45000 : USD 0.0311
99000 : USD 0.0287

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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SMD Switching Diode 1N4148WT-HF + RoHS Device Halogen Free - Features SOD-523 - Fast switching device (Trr < 4.0nS). 0.008(0.20) 0.051(1.30) REF. 0.043(1.10) - Power dissipation of 150mW. 0.033(0.85) 0.014(0.35) 0.030(0.75) - High stability and high reliability. 0.010(0.25) 0.067(1.70) - Low reverse leakage. 0.059(1.50) 0.028(0.70) 0.020(0.50) Mechanical data 0.030(0.77) 0.006(0.15) 0.003(0.08) 0.020(0.51) - Case: SOD-523, molded plastic. 0.003(0.07) 0.000(0.01) - Polarity: Color band denotes cathode end. - Mounting position: Any. Dimensions in inches and (millimeter) Circuit Diagram Maximum Rating (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit Reverse voltage VR 75 V Peak reverse voltage VRM 100 V Power dissipation 150 PD mW Operating junction temperature Tj 150 C Storage temperature range TSTG -55 to +150 C Thermal resistance from junction to ambient R JA 833 C/W Working inverse voltage WIV 75 V Average rectied current Io 150 mA Non-repetitive peak forward current IFM 300 mA Peak forward surge current tp = 1s, TA = 25C IFSM 2.0 A Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-J0021 Page 1 Comchip Technology CO., LTD.SMD Switching Diode Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit IR = 100A 100 Breakdown voltage BV V IR = 5A 75 VR = 20V 25 nA Reverse leakage current IR A VR = 75V 1 IF = 1.0mA 0.715 IF = 10mA 0.855 Forward voltage VF V IF = 50mA 1.00 IF = 150mA 1.25 IF = IR = 10mA, RL = 100 Reverse recovery time TRR 4 nS Irr = 0.1 x IR Capacitance VR = 0V, f = 1MHz pF CT 2 Rating and Characteristic Curves (1N4148WT-HF) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 200 1000 100 Ta=100C 10 100 1 Ta=25C 10 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 Forward Voltage, VF (V) Reverse Voltage, VR (V) Fig.3 - Capacitance Characteristics Fig.4 - Power Derating Curve 1.2 200 Ta = 25C f = 1MHz 1.1 150 1.0 100 0.9 50 0.8 0 0 5 10 15 20 0 25 50 75 100 125 150 Reverse Voltage, VR (V) Ambient Temperature, Ta (C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-J0021 Page 2 Comchip Technology CO., LTD. Ta=100C Ta=25C Capacitance Between Terminals, CT (pF) Forward Current, IF (mA) Power Dissipation, PD (mW) Reverse Current, IR (nA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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