1N5407T-G Comchip

1N5407T-G electronic component of Comchip
1N5407T-G Comchip
1N5407T-G Small Signal Switching Diodes
1N5407T-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1N5407T-G Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. 1N5407T-G Small Signal Switching Diodes are a product manufactured by Comchip. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

Part No. 1N5407T-G
Manufacturer: Comchip
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes VRRM=800V, IAV=3A
Datasheet: 1N5407T-G Datasheet (PDF)
Price (USD)
1: USD 0.6061 ea
Line Total: USD 0.61 
Availability : 38
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 0.6061
10$ 0.4256
100$ 0.2432
500$ 0.1611
1200$ 0.1351
2400$ 0.1203
4800$ 0.1033
9600$ 0.0954
24000$ 0.084

Availability 38
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6061
10$ 0.4256
100$ 0.2432
500$ 0.1611
1200$ 0.1351
2400$ 0.1203
4800$ 0.1033
9600$ 0.0954
24000$ 0.084

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1N5407T-G from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5407T-G and other electronic components in the Small Signal Switching Diodes category and beyond.

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General Purpose Silicon Rectiers 1N5400-G Thru. 1N5408-G Voltage: 50 to 1000 V Current: 3.0 A RoHS Device DO-27 Features 0.051(1.30) DIA. 0.035(0.90) - Open junction chip. 0.945(24.0) min. - Low reverse leakage. - High forward surge current capability. - High temperature soldering guaranteed 250C/10 seconds at terminals. 0.374(9.50) 0.283(7.20) 0.220(5.60) DIA. 0.197(5.00) Mechanical data 0.945(24.0) min. - Epoxy: UL 94V-0 rate ame retardant. - Case: DO-27, molded plastic. - Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Dimensions in inches and (millimeter) - Polarity: Color band denotes cathode. - Mounting position: Any. Circuit Diagram Maximum Ratings and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Parameter Symbol Unit -G -G -G -G -G -G -G Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectied current IF(AV) 3.0 A at TL=100C Peak forward surge current, 8.3ms single IFSM 150 A half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 3.0A VF 1.10 V TA=25C 10.0 Maximum DC reverse current A IR at rated DC blocking voltage TA=125C 500 Typical junction capacitance (Note 1) CJ 50 pF Typical thermal resistance R JA 45 C/W Operating junction and storage temperature range TJ, TSTG -55 to +150 C Notes: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BG015 Page 1 Comchip Technology CO., LTD.General Purpose Silicon Rectiers Rating and Characteristic Curves (1N5400-G Thru. 1N5408-G) Fig.1 - Derating Curve Output Rectied Fig.2 - Max. Non-Repetitive Peak Current Forward Surge Current Per Leg 210 3.0 180 f=60Hz 150 2.0 120 90 1.0 60 30 1Cycle 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Lead Temperature, (C) Number of Cycles Fig.3 - Typical Forward Voltage Fig.4 - Typical Reverse Leakage Characteristics Characteristics 10 100 Tj=125C 10 1 1 0.1 Tj=25C 0.1 TJ=25C Pulse width=300s 1% duty cycle 0.01 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BG015 Page 2 Comchip Technology CO., LTD. Instantaneous Forward Current, (A) Average Forward Rectied Current, (A) Instantaneous Reverse Leakage Peak Forward Surge Current, (A) Current, (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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