High Speed Switching Diode A1N4148WT-HF RoHS Device Halogen Free Features SOD-523 - Fast switching speed. - Ultra-small surface mount package. 0.010(0.25) 0.051(1.30) 0.006(0.15) 0.043(1.10) - For general purpose switching applications. 0.014(0.35) 0.035(0.90) - High conductance. 0.010(0.25) 0.028(0.70) - AEC-Q101 Qualied. 0.067(1.70) 0.059(1.50) Mechanical data 0.006(0.15) 0.002(0.05) - Case: Molded plastic, SOD-523 0.028(0.70) 0.020(0.50) Circuit Diagram Dimensions in inches and (millimeter) Cathode Anode Maximum Rating (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit Non-repetitive peak reverse voltage VRM 100 V Reverse voltage VR 75 V RMS reverse voltage VR(RMS) 75 V Average rectied output current IO 125 mA t=1s 2.0 Non-repetitive peak forward surge current IFSM A t=100ms 1.0 Total power dissipation Ptot 150 mW Thermal resistance junction to ambient air R JA 833 C/W Thermal resistance junction to lead R JL 829 C/W Thermal resistance junction to case R JC 561 C/W junction temperature range TJ -65 to +150 C Storage temperature range TSTG C -65 to +150 Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-J0016 Page 1 Comchip Technology CO., LTD.High Speed Switching Diode Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Min Max Unit Reverse breakdown voltage V(BR)R IR = 1.0A 75 V IF = 1mA 0.715 IF = 10mA 0.855 Forward voltage VF V IF = 50mA 1.0 IF = 150mA 1.25 A VR = 75V 1.0 Reverse current IR VR = 20V 25 nA Diode capacitance Cd VR = 0V, f = 1MHz 2.0 pF Reverse recovery time IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 trr 4.0 nS Rating and Characteristic Curves (A1N4148WT-HF) Fig.1 - Derating Curve Fig.2 - Forward Characteristics 200 1 R JA = 833C/W TA=150C 150 TA=75C 0.1 100 TA=25C TA=0C TA=-40C 0.01 50 0 0.001 0 25 50 75 100 125 150 0 0.5 1.0 1.5 Ambient Temperature, TA (C) Instantaneous Forward Voltage, VF (V) Fig.3 - Typical Reverse Characteristics Fig.4 - Typical Capacitance vs. Reverse Voltage 10000 2.0 TA=150C f = 1MHz 1.8 TA=125C 1000 1.6 1.4 TA=75C 100 1.2 TA=25C 1.0 10 0.8 TA=0C 0.6 1 0.4 TA=-40C 0.2 0.1 0.0 0 20 40 60 80 100 0 10 20 30 40 Instantaneous Reverse Voltage, VR (V) Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-J0016 Page 2 Comchip Technology CO., LTD. Instantaneous Reverse Current, IR (nA) Power Dissipation, PD (mW) Total Capacitance, CT (pF) Instantaneous Forward Current, IF (A)