X-On Electronics has gained recognition as a prominent supplier of A5KP12CA-G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. A5KP12CA-G ESD Suppressors / TVS Diodes are a product manufactured by Comchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

A5KP12CA-G Comchip

A5KP12CA-G electronic component of Comchip
A5KP12CA-G Comchip
A5KP12CA-G ESD Suppressors / TVS Diodes
A5KP12CA-G  Circuit Protection

Images are for reference only
See Product Specifications
Part No. A5KP12CA-G
Manufacturer: Comchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 5000W 12V BIDIRECTION AEC-Q101
Datasheet: A5KP12CA-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.835 ea
Line Total: USD 2.84 
Availability - 50
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
50
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 2.835
10 : USD 2.3184
100 : USD 1.4322
250 : USD 1.4322
500 : USD 1.2705
1000 : USD 1.2359

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the A5KP12CA-G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A5KP12CA-G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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5000W Transient Voltage Suppressor A5KP-G Series Breakdown Voltage: 6.8 to 440 Volts Peak Pulse Power: 5000 Watts RoHS Device R-6 Features - Glass passivated chip. 0.052(1.32) DIA. 0.048(1.22) - 5000W peak pulse power capability with a 10/1000s waveform, repetitive rate (duty cycle):0.01% 1.0(25.4) - Low leakage. MIN. - Uni and Bidirectional unit. - Excellent clamping capability. - Very fast response time. 0.360(9.14) - Comply with AEC-Q101 0.340(8.64) R - UL recognized file E349157 0.360(9.14) - Range: A5KP5.0(C)A thru. A5KP190(C)A DIA. 0.340(8.64) Mechanical Data 1.0(25.4) MIN. -Case: Molded plastic. -Epoxy: UL 94V-0 rate flame retardant -Lead: Solderable per MIL-STD-202, method 208 guranteed. Dimensions in inches and (millimeter) -Polarity: Color band denotes cathode end except Bipolar. -Mounting position: Any Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derated current by 20%. Symbol Parameter Value Unit Peak power dissipation with a 10/1000 s PPP 5000 W waveform (Note 1) Peak pulse current with a 10/1000 s waveform IPP A See Next Table (Note 1) Power dissipation on infinite heatsink at TL=75C 8.0 PD W Peak forward surge current, 8.3ms single IFSM 500 A half sine-wave unidirectional only (Note 2) Maximum instantaneous forward voltage at VF 3.5 / 5.0 V 100A for uni-directional devices only (Note 3) Operating junction and storage temperature TJ, TSTG -55 to +150 C range NTOES: (1) Non-repetitive current pulse, per fig.5 and derated above TA=25C per fig.1 (2) Measured on 8.3 ms single half sine wave of equivalent square wave, duty cycle=4 pulses per minute maximum. (3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-BTV06 Page 1 Comchip Technology CO., LTD.5000W Transient Voltage Suppressor RATING AND CHARACTERISTIC (A5KP-G Series) Fig.1 - Pulse Derating Curve Fig.2 - Maximum Non-Repetitive Surge Current 500 100 TJ = TJ Max 8.3ms Single Half 450 Sine-Wave 75 400 350 50 300 25 250 0 200 0 25 50 75 100 125 150 175 200 1 10 100 Ambient Temperature, TA (C) Number of Cycle at 60 HZ Fig.3 - Steady State Power Derating Curve Fig.4- Peak Pulse Power Rating Curve 8 100 6 10 4 1 2 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 Lead Temperature,TL (C) Pulse Width, td (s) Fig.5 - Pulse Waveform Fig.6 - Typical Junction Capacitance 125 100000 TJ = 25C Bi-directional Tr = 10 s zero bias Pulse width (td) is defined as the point where the peak current decays to 50% of IPP Uni-directional Peak value IPP 100 10000 zero bias 75 1000 Uni-directional VRWM Half value = IPP/2 50 100 Bi-directional VRWM 10/1000 s. Waveform as defined by R.E.A. 10 25 TJ=25C td f=1.0MHz 0 1 0 1 2 3 4 1 10 100 1000 Time, (ms) Breakdown Voltage, VBR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-BTV06 Page 2 Comchip Technology CO., LTD. Peak Pulse Derating in Percentage Steady State Power Dissipation, (W) Peak Pulse Current, (%) of Peak Power or Current, (%) Junction Capacitance ,CJ (PF) Peak Power, (Kw) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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