SMD Switching Diode ACDST-2004S-HF RoHS Device Halogen Free Features SOT-23 - Design for mounting on small surface. 0.119 (3.00) 0.110 (2.80) - High speed switching. 3 - High mounting capability, strong surge 0.056 (1.40) 0.047 (1.20) withstand, high reliability. 1 2 - Comply with AEC-Q101 0.079 (2.00) 0.071 (1.80) Mechanical data 0.006 (0.15) 0.003 (0.08) - Case: SOT-23 0.041 (1.05) 0.100 (2.55) 0.035 (0.90) 0.089 (2.25) - Terminals: Solder plated, solderable per MIL-STD-750, Method 2026. 0.004 (0.10) max - Weight: 0.0078 grams(approx.). 0.020 (0.50) 0.020 (0.50) 0.012 (0.30) 0.012 (0.30) Circuit Diagram Dimensions in inches and (millimeters) 3 1 2 Maximum Rating (at TA=25C unless otherwise noted) Parameter Symbol Limits Unit Peak repetitive peak reverse voltage 300 VRRM V Working peak reverse voltage VRWM 240 V DC blocking voltage VR 240 V RMS reverse voltage VR(RMS) 170 V Forward continuous current IFM 225 mA Peak repetitive forward current IFRM 625 mA t=1.0us 4.0 Peak forward surge current IFSM A 1.0 t=1.0s Power dissipation PD 350 mW Thermal resistance, junction to ambient R JA 357 C/W Operating junction temperature TJ , TSTG -65 to +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Test Conditions Min Max Unit Reverse breakdown voltage IR=100 A VBR 300 V VR=240V nA Reverse leakage current IR 100 VR=240V , Tj = 150C A IF=20mA 0.87 Forward voltage VF V IF=100mA 1.0 Diode capacitance VR=0V, f=1MHz pF CT 5.0 IF = IR = 30mA, Reverse recovery time ns trr 50 Irr = 3.0mA, RL = 100 Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-J0001 Page 1 Comchip Technology CO., LTD.SMD Switching Diode Electrical and Characteristic Curves (CDST-2004S-HF) Fig.1- Power Derating Fig.2- Typical Forward Characteristics 300 1000 250 Ta=150C Ta=25C 100 200 10 150 1.0 100 0.1 50 0 0.01 1.6 2.0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 Instantaneous Forward Voltage, (V) Ambient temperature, (C) Fig.3- Typical Diode Capacitance Fig.4- Typical Reverse Current Characteristics Characteristics 100 2.0 10.0 1.5 Ta=150C Ta=125C 1.0 Ta=100C 1.0 Ta=75C 0.1 Ta=50C 0.5 Ta=25C 0.01 0 0 0.01 0.1 1.0 10 0 40 80 120 160 200 240 Reverse Voltage, (V) Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 AQW-J0001 Comchip Technology CO., LTD. Forward Current, (mA) CT, Diode Capacitance, (pF) Reverse Current, (uA) Instantaneous Forward Current, (mA)