CDBFR0140R Comchip

SMD Schottky Barrier Diode CDBFR0140R-HF Io = 100 mA VR = 40 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102(2.60) 0.095(2.40) -Low reverse current. -Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data 0.035(0.90) 0.027(0.70) -Case: 1005/SOD-323F standard package, 0.020(0.50) Typ. molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & B9 0.040(1.00) Typ. -Mounting position: Any -Weight: 0.006 gram(approx.). Dimensions in inches and (millimeter) O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Repetitive Peak reverse voltage VRRM 45 V Reverse voltage VR 40 V Average forward rectified current IO 100 mA 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 1 A on rate load (JEDEC method) O Storage temperature TSTG -40 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ Symbol Parameter Conditions Min Max Unit Forward voltage IF = 10mA VF 0.45 V Reverse current VR = 10V IR 1 uA Capacitance between terminals f = 1 MHz, and 10 VDC reverse voltage pF CT 6 REV:A QW-G1025 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBFR0140R-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 1m 100u O 125 C 100 10u O 75 C 10 1u 100n O 25 C 1 10n O -25 C 0.1 1n 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 100 100 80 60 10 40 20 0 1 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 O Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1025 Page 2 Comchip Technology CO., LTD. O 125 C O 25 C O 75 C O -25 C Capacitance between terminals (PF) Forward current (mA ) Average forward current(%) Reverse current ( A )