SMD Schottky Barrier Rectifiers CDBMHT340-HF Thru. CDBMHT3100-HF Reverse Voltage: 40 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free SOD-123HT 0.146(3.70) 0.130(3.30) Features 0.012(0.30) Typ. - Excellent power dissipation of fers better reverse leakage current and thermal resistance. 0.071(1.80) 0.055(1.40) - Low power loss, high efficiency. - High current capability, low forward voltage drop. - High surge capability. 0.039(1.00) - Guard ring for overvoltage protection. 0.024(0.60) - Ultra high-speed switching. 0.004(0.10) 0.083(2.10) 0.031(0.80) - Silicon epitaxial planar chip, metal silicon junction. 0.075(1.90) Typ. Typ. 0.016(0.40) Typ. Mechanical data 0.031(0.80) 0.051(1.30) 0.043(1.10) 0.024(0.60) - Epoxy: UL94-V0 rated flame retardant. 0.047(1.20) - Case: Molded plastic, SOD-123HT 0.033(0.85) 0.039(1.00) 0.030(0.75) - Terminals: Solderable per MIL-STD-750, method 2026. 0.047(1.20) 0.039(1.00) - Polarity: Indicated by cathode band. Dimensions in inches and (millimeter) - Mounting Position : Any. - Weight: 0.011 grams approx. Circuit diagram Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter CDBMHT340-HF CDBMHT360-HF CDBMHT3100-HF Unit Repetitive peak reverse voltage VRRM 40 60 100 V Continuous reverse voltage VR 40 60 100 V RMS voltage VRMS 28 42 70 V Forward voltage IF=3A VF 0.55 0.70 0.85 V Operating temperature TJ -55 to +125 -55 to +150 C Storage temperature range TSTG -65 to +175 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions MIN. TYP. MAX. Unit Forward rectified current see Fig.1 IO 3 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 50 A on rate load (JEDEC method) VR =VRRM TJ=25C IR 0.2 mA Reverse Current VR =VRRM TJ=100C IR 10 mA Junction to ambient R JA 70 Thermal Resistance Junction to case R JC 35 C/W Junction to lead R JL 30 Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 160 pF Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JB056 Page 1 Comchip Technology CO., LTD. CDBMHT340-HF CDBMHT360-HF ~ CDBMHT3100-HF SMD Schottky Barrier Rectifiers Rating and Characteristic Curves (CDBMHT340-HF Thru. CDBMHT3100-HF) Fig.1 - Typical Forward Current Fig.2 - Typical Forward Characteristics Derating Curve 100 CDBMHT340-HF 3.0 10 2.5 CDBMHT360-HF CDBMHT3100-HF 2.0 1 1.5 1.0 0.1 0.5 TJ=25C Pulse Width 300US 1% Duty Cycle 0 0.01 0 25 50 75 100 125 150 170 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Lead Temperature, TL (C) Forward Voltage, VF (V) Fig.3 - Maximum Non-Repetitive Fig.4 - Typical Junction Capacitance Forward Surge Current 700 50 O TJ=25 C 8.3ms single half sine 600 wave, JEDEC method 40 500 30 400 TJ=25C 300 20 200 10 100 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, VR (V) Fig.5 - Typical Reverse Characteristics 100 40V 60V~100V 10 TJ=100C 1 0.1 TJ=25C 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JB056 Page 2 Comchip Technology CO., LTD. Average Forward Current, IF (A) Reverse Leakage Current, (mA) Peak Forward Surge Current, (A) Instantaneous Forward Current, IF (A) Junction Capacitance, CJ (pF)