SMD Schottky Barrier Diode CDBQR40-HF Io = 200 mA VR = 40 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041(1.05) - Low reverse current. 0.037(0.95) - Designed for mounting on small surface. - Extremely thin / leadless package. 0.026(0.65) 0.022(0.55) - Majority carrier conduction. Mechanical data - Case: 0402 / SOD-923F standard package, 0.022(0.55) molded plastic. 0.018(0.45) - Terminals: Gold plated, solderable per 0.014(0.35) 0.010(0.25) MIL-STD-750,method 2026. - Marking Code: cathode band & B9 - Mounting position: Any. - Weight: 0.001 grams(approx.). 0.020(0.50) 0.016(0.40) Circuit diagram Dimensions in inches and (millimeter) O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Peak reverse voltage VRM 40 V Reverse voltage VR 40 V RMS reverse voltage VR(RMS) 28 V Average forward rectified current IO 200 mA 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 0.6 A on rate load(JEDEC method) Power dissipation PD 125 mW O Storage temperature range TSTG -65 +125 C O Operating temperature range Tj -55 +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit IF = 1mA 0.38 Forward voltage VF V IF = 40mA 1 Reverse current VR = 30V IR 0.2 uA Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage pF CT 5 Reverse recovery time IF=IR=10mA,Irr=0.1xIR,RL=100 ohm 5 Trr nS Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-G1100 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR40-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 100u O 10u 125 C 100 1u O 75 C 10 100n O 1 25 C 10n O -25 C 0.1 1n 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 4 120 Mounting on glass epoxy PCBs f=1MHz O 100 TA=25 C 3 80 60 2 40 1 20 0 0 0 10 20 30 40 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-G1100 Page 2 Comchip Technology CO., LTD. O 125 C O 25 C O 75 C O -25 C Capacitance between terminals (PF) Forward current (mA ) Average forward current(%) Reverse current ( A )