Product Information

CDSFR4448

CDSFR4448 electronic component of Comchip

Datasheet
Diodes - General Purpose, Power, Switching DFN 125mA 80V Sm Sgnl Switching

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.627 ea
Line Total: USD 0.63

1567 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1557 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

CDSFR4448
Comchip

1 : USD 0.4509
10 : USD 0.3132
100 : USD 0.1531
1000 : USD 0.089
4000 : USD 0.0723
8000 : USD 0.0581
24000 : USD 0.0558
100000 : USD 0.0451

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
Taric
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SMD Switching Diode CDSFR4448-HF Io = 125 mA VR = 80 Volts RoHS Device 1005/SOD-323F Halogen Free 0.102(2.60) 0.095(2.40) Features 0.051(1.30) - Fast Switching Speed 0.043(1.10) - Designed for mounting on small surface. - Extremely thin/leadless package. Mechanical data 0.035(0.90) 0.027(0.70) - Case: 1005/SOD-323F standard package, 0.024(0.60) molded plastic. 0.016(0.40) - Terminals: Gold plated, solderable per MIL-STD-750,method 2026. - Polarity: Indicated by cathode band. - Mounting position: Any. 0.041(1.05) 0.037(0.95) - Weight: 0.006 grams(approx.). Dimensions in inches and (millimeter) Circuit diagram Maximum Rating (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Repetitive peak reverse voltage VRRM 100 V Reverse voltage VR 80 V Average forward rectified current IO 125 mA t = 1 us 2 Forward current,surge peak IFSM A t = 8.3ms 1 Power dissipation PD 350 mW Junction temperature range Tj -40 +125 C Storage temperature range TSTG -40 +125 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit IF = 5 mA 0.72 Forward voltage VF V IF= 100 mA 1 VR = 20 V 25 Reverse current IR nA VR = 80 V 100 Capacitance between terminals f = 1 MH Z, and 0.5 VDC reverse voltage 9 CT PF Reverse recovery time IF = IR = 10mA,Irr=0.1 X IR,R L=100ohm Trr 9 nS Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G0027 Page 1SMD Switching Diode RATING AND CHARACTERISTIC CURVES (CDSFR4448-HF) Fig.1 - Forward Characteristics Fig.2 - Reverse characteristics 1000 10u O 125 C 100 1u O 75 C 10 100n 1 10n O 25 C 0.1 1n O -25 C 0.1n 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 80 90 100 Forward Voltage, (V) Reverse Voltage, (V) Fig.3 - Capacitance Between Fig.4 - Current Derating Curve Terminals Characteristics 5.0 Mounting on glass epoxy PCBs f=1MHz O TA=25 C 100 4.0 80 3.0 60 2.0 40 1.0 20 0 0 00 25 50 75 100 125 150 0 5 10 15 20 25 30 35 Reverse Voltage , (V) Ambient Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G0027 Page 2 O 75 C O 25 C O 125 C O -25 C Forward current, (mA ) Capacitance Between Terminals,(pF) Reverse current, ( A ) Average Forward Current, ( % )

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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