Small Signal Switching Diodes CDST-16-G Reverse Voltage: 75 Volts Forward Current: 150 mA RoHS Device SOT-23 Features - Design for mounting on small surface. 0.118(3.00) 0.110(2.80) - High speed switching. 3 - High mounting capability, strong surge 0.055(1.40) withstand, high reliability. 0.047(1.20) 1 2 0.079(2.00) Mechanical data 0.071(1.80) - Case: SOT-23, molded plastic. 0.006(0.15) 0.003(0.08) - Terminals: solderable per MIL-STD-750, 0.041(1.05) 0.100(2.55) method 2026. 0.035(0.90) 0.089(2.25) - Weight: 0.0078 grams (approx.). 0.004(0.10) max Circuit Diagram 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) 3 Dimensions in inches and (millimeter) 1 2 Maximum Ratings and Electrical Characteristics, Single Diode (at Ta=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Units Peak repetitive peak reverse voltage VRRM 75 V RMS reverse voltage VRMS 53 V DC blocking voltage VDC 75 V Forward continuous current IFM 300 mA Average forward current IO 150 mA T=1.0 S 2.0 Peak forward surge current A IFSM T=1.0 S 1.0 Power dissipation PD 225 mW Thermal resistance junction to ambient R JA 556 C/W Reverse breakdown voltage V(BR)R IR=100A 75 V IF=1mA 0.715 IF=10mA 0.855 Forward voltage VF V IF=50mA 1.0 IF=150mA 1.25 VR=75V A Reverse current IR 1.0 IF=IR=10mA, Irr=0.1*IR Reverse recovery time Trr 6 nS RL=100 Capacitance between terminals VR=0V, f=1.0MHz pF CT 2 Junction temperature TJ +150 C Storage temperature TSTG -55 +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0051 Page 1 Comchip Technology CO., LTD.Small Signal Switching Diodes Rating and Characteristic Curves (CDST-16-G) Fig.1 - Forward Characteristics Fig.2 - Power Derating Curve 1000 400 Mounted on glass epoxy PCBs 300 100 TA=150C 200 TA=75C TA=-40C TA=0C 10 TA=25C 100 1 0 0 0.5 1.0 1.5 0 25 50 75 100 125 150 175 Forward Voltage, (V) Ambient Temperature, (C) Fig.3 - Reverse Characteristics Fig.4 - Capacitance Between Terminals Characteristics 10 2 TA=150C TJ=25C f=1.0MHz TA=125C 1 100n TA=75C 1 TA=25C 10n TA=0C 1n TA=-40C 0.1n 0 0 20 40 60 80 100 0 10 20 30 40 50 Reverse Voltage, (V) Reverse Voltage, (V) Fig.5 - Forward Characteristics Fig.6 - Leakage Current vs Junction Temperature 1000 10000 100 1000 10 100 1.0 10 0.1 0.01 1 0 1 2 0 100 200 Instantaneous Forward Voltage, (V) Junction Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0051 Page 2 Comchip Technology CO., LTD. Reverse Current, (A) Forward Current, (mA) Instantaneous Forward Current, (mA) Total Capacitance, (pF) Power Dissipation, (mW) Leakage Current, (nA)