SMD Switching Diode CDSV-19-G/-20-G/-21-G RoHS Device Features SOD-323 -Fast switching speed. 0.071(1.80) -Small surface mount type, ideally suited for automatic 0.063(1.60) insertion. 0.014(0.35) 0.055(1.40) -Low reverse current and low forward voltage. 0.010(0.25) 0.047(1.20) -High reliability. 0.106(2.70) 0.098(2.50) -For general purpose switching applications. 0.006(0.15) Mechanical data 0.039(1.00)MAX. 0.003(0.08) -Case: SOD-323, Molded Plastic 0.004(0.10)MAX. 0.019(0.475)REF. -Terminals: Solderable per MIL-STD-202, Method 208 -Weight: 0.01 gram(approx.) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter CDSV-19-G CDSV-20-G CDSV-21-G Unit Non-repetitive peak reverse voltage VRM 120 200 250 V Repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 100 150 200 V DC blocking voltage VR RMS reverse voltage VR(RMS) 71 106 141 V Forward continuous current (Note 1) IFM 400 mA Average rectified output current (Note 1) IO 200 mA Non-repetitive peak forward surge current t=1.0uS 2.5 IFSM A 0.5 t=1.0S Repetitive peak forward surge current IFRM 625 mA Power dissipation PD 250 mW Thermal resistance junction to ambient air (Note 1) R JA 500 C/W Operating and storage temperature range TJ,TSTG -65 ~ +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min Max Unit IF=100mA 1.0 Forward voltage VF V ----- ----- IF=200mA 1.25 CDSV-19-G VR=100V 0.1 A Reverse current CDSV-20-G IR VR=150V ----- ----- 0.1 CDSV-21-G VR=200V 0.1 Capacitance between terminals ----- ----- pF CT VR=0V, f=1.0MHz 5.0 IF=IR=30mA, Reverse recovery time ----- ----- trr 50 nS Irr=0.1XIR, RL=100 REV:C QW-B0030 Page 1SMD Switching Diode RATING AND CHARACTERISTIC CURVES (CDSV-19-G/-20-G/-21-G) Fig.1 - Power Derating Curve Fig.2 - Typical Forward Characteristics 300 1000 250 200 100 O TA= -40 C 150 O TA= 0 C O TA=25 C 100 10 O TA=75 C O 50 TA=150 C O TA=125 C 0 1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature, TA(C) Forward Voltage, VF (V) Fig.3 - Typical Reverse Characteristics Fig.4 - Typical Capacitance vs. Reverse Voltage 100 4.0 O TA=150 C f=1.0MHz 3.5 10 O TA=125 C 3.0 1 O TA=75 C 2.5 0.1 2.0 O TA=25 C 1.5 0.01 O TA=0 C 1.0 O TA=-40 C 0.001 0.5 0.0001 0 0 50 100 150 200 250 0 10 20 30 40 Reverse Voltage, VR (V) Reverse Voltage, VR (V) REV:C QW-B0030 Page 2 Reverse Current, IR (A) Power Dissipation, Pd (mW) Total Capacitance, CT (pF) Forward Current, IF (mA)