SMD ESD Protection Diode CPDA10R5V0U-HF RoHS Device Halogen Free Features - IEC61000-4-2 (ESD)15kV(Contact) DFN10P/A10R - Working voltage: 5 V - Low leakage current. 0.100(2.55) - Low capacitance: 0.5 pF typical (I/O to GND) 0.096(2.45) PIN 1 DOTBYMARKING Mechanical data - Case: DFN10P package, molded plastic. - Terminals: Gold plated, solderable per 0.041(0.55) MIL-STD-750,method 2026. 0.037(0.45) - Mounting position: Any Circuit Diagram 0.002(0.05) MAX. 0.018(0.45) 0.014(0.35) 0.010(0.255) 0.096(0.245) 0.039(0.99) 0.035(0.89) 0.016(0.40) 0.012(0.30) I/O I/O I/O I/O Pin 4 Pin 1 Pin 2 Pin 5 0.001(0.03) 0.020(0.50) 0.020(0.50) BSC. BSC. BSC. 0.079(2.00) BSC. GND Pin 3 & 8 Dimensions in inches and (millimeters) Package N/C N/C N/C N/C 10 9 7 8 6 = Pin 1 indicator GND 1 2 4 5 3 I/O I/O I/O I/O Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7083 Page 1 Comchip Technology CO., LTD. 0.023(0.59) 0.041(1.05) BSC. 0.037(0.95)SMD ESD Protection Diode Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak pulse power ( tp = 8/20us) PPP 90 W Peak pulse current ( tp = 8/20us) IPP A 5 ESD per IEC 61000-4-2 (Air) ESD 15 kV ESD per IEC 61000-4-2 (Contact) Operating temperature range TJ -55 to +125 C Storage temperature range TSTG -55 to +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-off voltage VRWM 5 V Forward voltage VF 1.2 V IF = 10 mA Breakdown voltage IT = 1 mA VBR 6 V Leakage current VRWM = 5V IR 0.1 uA IPP = 1A, TP = 8/20us, 9 12 VC V I/O Pin to GND Clamping voltage IPP = 5A, TP = 8/20us, VC V 15 18 I/O Pin to GND VR = 0V, f = 1MHZ Junction capacitance Cj pF 0.5 0.7 I/O Pin to GND Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7083 Page 2 Comchip Technology CO., LTD.