SMD ESD Protection Diode CPDQ5V0-HF RoHS Device Halogen Free Features - IEC61000-4-2 Level 4 ESD protection. 0402/SOD-923F - ESD Rating of Class 3 per Human Body Mode. - Peak Power up to 150 Watts 8x20s Pulse. 0.041(1.05) 0.037(0.95) - Low Leakage current. 0.033(0.85) 0.030(0.75) - Response Time is Typically <1ns - Working Voltage: 5V 0.010(0.25) Mechanical data 0.006(0.15) 0.026(0.65) 0.022(0.55) - Case: 0402/SOD-923F small outline plastic package. 0.007(0.17) - Terminals: Matte tin plated, solderable per 0.003(0.07) 0.006(0.15) 0.002(0.05) MIL-STD-750, method 2026. 0.016(0.40) - Mounting position: Any. 0.013(0.34) - High temperature soldering guaranteed: 260C/10 second. - Weight: 0.001 grams(approx.). Dimensions in inches and (millimeter) Circuit Diagram Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20 us PPP 174 W Peak pulse current TP = 8/20 us IPP 9.4 A IEC 61000-4-2(Air) ESD 15 kV ESD capability IEC 61000-4-2(Contact) ESD 8 kV Junction temperature rang TJ 150 C Operating temperature rang TOP -40 to +125 C Storage temperature rang TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JP028 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Electrical Characteristics ( Ratings at TA=25C ambient temperature unless otherwise specified. VF=0.9V at IF=10mA ) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-off voltage VRWM 5 V Reverse leakage current A VR = 5 V IR 1 Reverse breakdown voltage V(BR) IR = 1 mA 5.6 V IPP= 5 A, tp=8/20us VC 11.6 V Clamping voltage IPP= 9.4 A, tp=8/20us VC 18.6 V Junction capacitance pF VR= 0V , F=1MHz CJ 15 NOTES: 1. Surge current waveform per Fig.1 2. VBR is measured with a pulse test current IT at an ambient temperature of 25C. RATING AND CHARACTERISTIC CURVES (CPDQ5V0-HF) Fig.1 - Pulse Waveform Fig. 2 - Power Derating Curve 120% Test Waveform parameters 100 Ta=25C tf=8us Peak Valur Ipp td=20us 100% 80 Peak Valur Ipp -t 80% 8/20us e 60 60% 40 Average Power 40% td= t Ipp /2 20 20% 0% 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 t-Time, (us) Lead Temperature, TL ( C ) Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JP028 Page 2 Comchip Technology CO., LTD. Percentage of Ipp Power Rating, (%)