SMD ESD Protection Diode Comchip S M D D i o d e S p e c i a l i s t CPDQC24VEU-HF RoHS Device Halogen Free Features 0402C/SOD-923F - Uni-directional ESD protection. 0.041(1.05) - IEC 61000-4-2 (ESD) 30KV(contact) 0.037(0.95) - Surface mount package. - Ultra small SMD package:0402. 0.026(0.65) 0.022(0.55) - High component density. Mechanical data 0.022(0.55) - Case: 0402C/SOD-923F package, 0.018(0.45) molded plastic. 0.001(0.02) - Terminals: Gold plated, solderable per Max. MIL-STD-202,method 208. 0.026(0.65) BSC. - Mounting position: Any. - High temperature soldering guaranteed: 0.022(0.55) 0.018(0.45) 260C/10 second. - Weight: 0.001 grams(approx.). 0.012(0.30) 0.008(0.20) Circuit diagram Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20us PPP 132 W Peak pulse current TP = 8/20us IPP 3 A IEC 61000-4-2(air) ESD capability ESD 30 kV IEC 61000-4-2(contact) Operation temperature range Tj -55~+125 C Storage temperature range TSTG -55~+150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM V 24 Forward voltage IF = 10mA VF 0.8 1.2 V Breakdown voltage IT = 1mA VBR 26.5 32 V Reverse leakage current VRWM = 24V IR 100 nA IPP = 1A, TP = 8/20us 31 34 Clamping voltage VC V IPP = 3A, TP = 8/20us 36 44 Junction capacitance VR = 0V, f = 1MHz pF CJ 35 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7098 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (CPDQC24VEU-HF) Fig.1 - 8/20us Peak Pulse Current Wave Fig.2 - Power rating derating curve Form Acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs Ta=25C tf=8us Peak Valur Ipp 100 td=20us 100% 80 -t 80% e 60 60% 40 40% td= t Ipp / 2 20 20% 0 0% 0 25 50 75 100 125 0 5 10 15 20 25 30 Ambient Temperature, ( C ) TTiimmee,, ((uuss)) Fig.4 - Capacitance Between Fig.3 - Clamping Voltage Vs. Terminals Characteristics Peak Pulse Current 35 60 f=1MHz TA=25C 30 50 25 40 20 15 30 10 20 5 8/20us waveform 10 0 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 18 20 22 24 Reverse Voltage, (V) Peak Pulse Current, IPP (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7098 Page 2 Comchip Technology CO., LTD. Clamping Voltage, VC (V) Percentage of Ipp Power Rating, (%) Capacitance Between Terminals, (PF)