SMD ESD Protection Diode CPDQC3V3AU-HF RoHS Device Halogen Free Features 0402C/SOD-923F - Uni-directional ESD protection. 0.041(1.05) - IEC 61000-4-5 (surge) Ipp=4A 0.037(0.95) - IEC 61000-4-2 (ESD) 20KV(contact) - Low clamping voltage. 0.026(0.65) 0.022(0.55) - Low leakage current. Mechanical data 0.022(0.55) - Case: 0402C/SOD-923F standard package, 0.018(0.45) molded plastic. - Terminals: Gold plated, solderable per 0.001(0.02) Max. MIL-STD-750, method 2026. 0.026(0.65) BSC. - Mounting position: Any. - Weight: 0.001 grams (approx.). 0.022(0.55) 0.018(0.45) Circuit diagram 0.012(0.30) 0.008(0.20) I/O I/O GND = Dimensions in inches and (millimeter) GND Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20s PPP 56 W Peak pulse current TP = 8/20s IPP 4 A IEC 61000-4-2(air) ESD 20 ESD capability kV IEC 61000-4-2(contact) ESD 20 Operating temperature range Tj -55 ~ +125 C Storage temperature range TSTG -55 ~ +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM 3.3 V Forward voltage IF = 15mA VF 1.2 V Breakdown voltage IT = 1mA VBR 4.2 V Reverse leakage current A VRWM = 3.3V IR 0.1 IPP = 1A, TP = 8/20s VC 8 10 V Clamping voltage IPP = 4A, TP = 8/20s VC 14 V Junction capacitance pF VR = 0V, f = 1MHz CJ 0.4 0.6 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7109 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Rating and Characteristic Curves (CPDQC3V3AU-HF) Fig.1 - 8/20s Peak Pulse Current Fig.2 - Power Rating Derating Curve Wave Form Acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs Ta=25C tf=8s Peak Valur Ipp td=20s 100% 100 -t 80% 80 e 60 60% 40% 40 td= t Ipp /2 20% 20 0% 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 Time, (s) Ambient Temperature, ( C ) Fig.4 - Forward Characteristic Fig.3 - Clamping Voltage Vs. Peak Pulse Current 100 15 13 Ta=125C Ta=100C 11 10 9 Ta=75C Ta=50C 7 Ta=25C 1 5 3 1 0 1 2 3 4 0.4 0.6 0.8 1.0 1.2 1.4 Peak Pulse Current, (A) Forward Voltage, ( V ) Fig.5 - Capacitance Between Terminals Characteristics 0.8 Ta=25C f=1MHZ 0.6 0.4 0.2 0 0 1 2 3 3.3 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-G7109 Page 2 Comchip Technology CO., LTD. Clamping Voltage, (V) Percentage Of Ipp Capacitance Between Terminals, (PF) Forward Current, (mA) Power Rating, (%)