SMD ESD Protection Diode CPDQR5V0H-HF RoHS Device Halogen Free Features 0402/SOD-923F -Bi-directional ESD protection 0.041(1.05) -IEC 61000-4-5 (surge) IPP=7A 0.037(0.95) -IEC 61000-4-2 (ESD) 30KV(contact) 0.026(0.65) -Low clamping voltage 0.022(0.55) -Low leakage current Mechanical data 0.022(0.55) 0.018(0.45) -Case: 0402/SOD-923F Standard package , molded plastic. 0.012(0.30) Typ. -Terminals: Gold plated, solderable per MIL-STD-750, method 2026. -Marking Code: E5 0.020(0.50) Typ. -Mounting position: Any. -Weight: 0.001 gram (approx.). Dimensions in inches and (millimeter) Maximum Rating and Electrical Characteristics O (at TA=25 C unless otherwise noted) Typ Parameter Symbol Min Max Unit Conditions Diode breakdown voltage IR = 1mA VBD 5.5 7.0 V Leakage current VR = 5V uA IL 1.0 Junction capacitance VR =0V,f =1MHz pF CT 20 IEC 61000-4-2(air) ESD 30 kV ESD capability IEC 61000-4-2(contact) ESD 30 kV IPP = 1 A, tp=8/20us Vc 11 V Clamping Voltage IPP = 7 A, tp=8/20us Vc 20 V TP=8/20us Peak Pulse Power PPP 140 W O 125 Operation temperature Tj C O Storage temperature TSTG -55 150 C REV:A QW-G7042 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDQR5V0H-HF) Fig. 1 - 8/20us Peak pulse current wave Fig. 2 - Capacitance between form acc. IEC 61000-4-5 terminals characteristics 12.0 100% 8 us to 100% 11.0 80% 10.0 60% 9.0 20 us to 50us 8.0 40% 7.0 20% 6.0 0% 5.0 0 10 20 30 40 0 1 2 3 4 5 Time, (us) Reverse voltage, (V) Fig.3 - Clamping voltage vs. Fig. 4 - Power rating derating curve peak pulse current 18 Mounting on glass epoxy PCBs 16 100 14 80 12 60 10 40 Waveform Parameters: 8 20 tr=8us td=20us 6 0 0 1 3 5 7 9 11 0 25 50 75 100 125 150 Peak pulse current, (A) Ambient temperature, ( C ) REV:A QW-G7042 Page 2 Comchip Technology CO., LTD. Clamping voltage, (V) IPPM Power rating, (%) Capacitance between terminals, (PF)