Low Capacitance ESD Protection Diode CPDU5V0USP-HF RoHS Device Halogen Free Features 0603/SOD-523F - Uni-directional ESD protection. 0.071(1.80) 0.063(1.60) - Surface mount package. - Low capacitance. 0.039(1.00) 0.031(0.80) - Low Leakage current. - High component density. Mechanical data 0.033(0.85) 0.027(0.70) - Case: 0603/SOD-523F standard package, 0.018(0.45) molded plastic. 0.012(0.30) - Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.014(0.35) 0.011(0.28) - Marking Code: Cathode band & E5P - Mounting position: Any. 0.030(0.75) 0.026(0.65) - Weight: 0.003 grams(approx.). Dimensions in inches and (millimeter) Circuit Diagram Maximum Rating And Electrical Characteristics (at TA=25C unless otherwise noted) Typ Symbol Parameter Min Max Unit Conditions Reverse stand-off voltage VRWM 5.0 V Forward voltage IF = 10mA VF 1.5 V Breakdown voltage IR = 1mA VBR 5.4 V Reverse leakage current VR = 5V IR 1.0 A Junction capacitance VR = 0V,f = 1MHz CJ 0.6 0.9 pF IEC 61000-4-2(air) 15 ESD capability ESD kV IEC 61000-4-2(contact) 8 IPP = 1A,TP=8/20us 13 Clamping voltage VC V IPP = 3A,TP=8/20us 25 Peak pulse power PPP 75 W Operation temperature range TJ -55 150 C Storage temperature range TSTG -55 150 C Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-G7058 Page 1 Comchip Technology CO., LTD.Low Capacitance ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDU5V0USP-HF) Fig.1 - 8/20us Peak Pulse Current Wave Fig.2 - Power Rating Derating Curve Form Acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs Ta=25C tf=8us Peak Valur Ipp td=20us 100 100% 80 -t 80% e 60 60% 40 40% td= t Ipp /2 20 20% 0 0% 0 25 50 75 100 125 150 0 5 10 15 20 25 30 Ambient Temperature, ( C ) t-Time, (us) Fig.3 - Clamping Voltage Vs. Fig.4 - Forward Voltage Vs. Peak Pulse Current Forward Current 30 1000 25 100 150C 25C 20 10 75C 1 15 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 Peak Pulse Current, IPP (A) Forward voltage, (V) Fig.5 - Capacitance Between Terminals Characteristics 0.8 f=1MHz TA=25C 0.6 0.4 0.2 0.0 0 1 2 3 4 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-G7058 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, (PF) Clamping Voltage,VC (V) Percentage of Ipp Power Rating, (%) Forward current, (mA)