SMD ESD Protection Diode CPDV6-5V0U-HF RoHS Device Halogen Free SOT-363 Features -EC61000-4-2 Level 4 ESD protection. 0.087(2.20) 0.079(2.00) -Surface mount package. -High component density. 0.053(1.35) 0.045(1.15) Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-363 Standard package, molded plastic. 0.006(0.15) 0.003(0.08) 0.039(1.00) -Terminals: Solderable per MIL-STD-750, 0.035(0.90) 0.096(2.45) 0.085(2.15) method 2026. -Marking code: E5U 0.014(0.35) 0.004(0.10) 0.018(0.46) 0.000(0.00) 0.010(0.26) 0.006(0.15) -Mounting position: Any. -Weight: 0.0091 gram (approx.) Dimensions in inches and (millimeter) Circuit diagram 6 5 4 1 2 3 Maximum Rating and Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Diode breakdown voltage VBD IR = 1mA 6.1 V Leakage current IL VR = 3V 0.1 1.0 uA Forward voltage VF 1.2 V IF =10mA Junction capacitance CT VR = 0V,f = 1MHz 60 80 pF IEC 61000-4-2(air) 15 ESD capability ESD kV IEC 61000-4-2(contact) 8 IPP = 1A,TP=8/20us 8 Clamping voltage VC V IPP = 8A,TP=8/20us 10 Peak pulse power PPP 80 W Operation temperature TJ 125 C Storage temperature TSTG -55 150 C REV:B QW-JP009 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDV6-5V0U-HF) Fig. 1 - 8/20us Peak pulse current Fig.2 - Power rating derating curve waveform acc. IEC 61000-4-5 120% Test Waveform 120 parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp td=20us 100% 100 -t 80% e 80 60% 60 40% 40 td= t Ipp /2 20% 20 0% 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 Ambient temperature, ( C ) Time, (us) Fig.3 - Clamping voltage vs. Fig.4 - Capacitance between peak pulse current terminals characteristics 14 100 f=1MHz 8/20us waveform TA=25C 12 80 10 60 8 6 40 4 20 2 0 0 0 2 4 6 8 0 1 2 3 4 5 Peak pulse current, IPP (A) Reverse voltage, (V) REV:B QW-JP009 Page 2 Comchip Technology CO., LTD. Percentage of Ipp Clamping voltage, VC (V) Power rating, (%) Capacitance between terminals, (PF)