SMD ESD Protection Diode CPDVR7V0-HF RoHS Device Halogen Free WBFBP-02C-A Features - Bi-directional ESD protection of one line. 0.026(0.65) - Reverse stand-o voltage: 7V. 0.022(0.55) - Low reverse clamping voltage. - Low leakage current. 0.041(1.05) 0.037(0.95) - Excellent package: 1.0mm x 0.6mm x 0.5mm. 0.004(0.09) 0.000(0.01) - Fast response time. - JESD22-A114-B ESD rating of class 3B per 0.022(0.55) 0.018(0.45) human body model. - IEC 61000-4-2 Level 4 ESD protection. 0.015(0.39) REF. 0.015(0.37) 0.011(0.27) 0.002(0.05) Mechanical data 0.002(0.05) REF. REF. - Case: WBFBP-02C-A package, 0.020(0.50) 0.017(0.42) 0.016(0.40) REF. molded plastic. 0.014(0.36) REF. 0.027(0.68) Circuit Diagram 0.023(0.58) Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit IEC 61000-4-2 ESD voltage air model 25 IEC 61000-4-2 ESD voltage contact model VESD kV (Note 1) JESD22-A114-B ESD voltage per human body model 16 ESD voltage machine model 0.4 Peak pulse power (Note 2) PPP 85 W Peak pulse current (Note 2) IPP 5 A Lead solder temperature - maximum (10 second duration) TL 260 C Junction temperature TJ 150 C Storage temperature range TSTG -55 ~ +150 C Notes: 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC 61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP071 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Symbol Typ Max Unit Conditions Min Reverse stand o voltage (Note 1) VRWM 7.0 V Reverse leakage current A VRWM = 7V IR 1 IT = 1mA 8.2 10.5 Breakdown voltage V(BR) V IT = 100mA 7.0 Clamping voltage (Note 2) IPP = 5A VC 17 V Junction capacitance VR = 0V, f = 1MHz pF CJ 9 Notes: 1. Other voltages available upon request. 2. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC 61000-4-5. Rating and Characteristic Curves (CPDVR7V0-HF) Fig.1 - 8/20s Peak Pulse Current Fig.2 - Reverse Characteristics Waveform Acc. IEC 61000-4-5 120% 100 Pulsed 100%IPP: 8s 75 100% 50 Ta=25C 80% -t e 25 60% 0 50%IPP: 20s Ta=100C -25 40% -50 20% -75 0% -100 0 10 20 30 40 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Time, (s) Reverse Voltage, VR (V) Fig.3 - Capacitance Characteristics Fig.4 - VC IPP 12 20 Ta=25C Ta=25C tp=8/20s f=1MHz 10 8 16 6 4 12 2 0 8 0 1 2 3 4 5 6 7 1 2 3 4 5 Reverse Voltage, VR (V) Reverse Peak Pulse Current, IPP (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP071 Page 2 Comchip Technology CO., LTD. Reverse Characteristics Reverse Characteristics 100 100 Pulsed Pulsed 75 75 50 50 T =25 T =25 a a 25 25 0 0 T =100 T =100 a a -25 -25 -50 -50 -75 -75 -100 -100 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 REVERSE VOLT AGE V (V) REVERSE VOLT AGE V (V) REVERSE CURRENT I (mA) R REVERSE CURRENT I (mA) R Junction Capacitance, CJ (pF) Percentage of Ipp Clamping Voltage, VC (V) Reverse Current, IR (mA)