SMD ESD Protection Diode CPDZ3V3U-HF RoHS Device Halogen Free Features 0201/DFN0603 - Uni-directional ESD protection. 0.026(0.670) - Surface mount package. 0.022(0.570) - Ultra small SMD package:0201 - High component density. 0.015(0.370) 0.011(0.270) - Low clamping voltage. - Low leakage. 0.013(0.335) Mechanical data 0.010(0.265) - Case: 0201/DFN0603 package, 0.007(0.175) 0.012(0.285) molded plastic. 0.004(0.105) 0.008(0.215) - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. - Polarity: Color band denotes cathode end. 0.011(0.285) 0.008(0.215) - Mounting position: Any Dimensions in inches and (millimeter) Circuit diagram Maximum Rating AND Electrical Characteristics (at TA=25C unless otherwise noted) Typ Symbol Min Max Unit Parameter Conditions Reverse stand-off voltage VRWM 3.3 V Breakdown voltage IR = 1mA VBR 5.7 6.2 6.7 V Forward voltage IF = 10 mA VF 1.2 V Leakage current VR = 3.3V IL 0.1 uA Junction capacitance pF VR = 0V, f=1MHZ CT 35 IEC 61000-4-2(air) 30 kV ESD capability ESD IEC 61000-4-2(contact) 30 kV IPP = 1A,TP=8/20us 7.5 V Clamping voltage VC IPP = 6.5A,TP=8/20us 10.6 V Peak pulse power TP=8/20us PPP 70 W Operation temperature TOP -40 125 C Storage temperature TSTG -55 150 C Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 1 QW-JP027 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDZ3V3U-HF) Fig.1 - 8/20us Peak Pulse Current Fig.2 - Power Rating Derating Curve Waveform Acc. IEC 6100-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp td=20us 100 100% 80 -t 80% e 60 60% 40 40% td= t Ipp/2 20 20% 0 0% 0 5 10 15 20 25 30 150 0 25 50 75 100 125 Time, (us) Ambient Temperature, ( C ) Fig.3 - Clamping Voltage Vs. Fig.4 - Reverse Characteristics Peak Pulse Current 1.00 11.0 8/20us waveform 10.0 0.10 50C 75C 9.0 100C 150C 125C 0.01 25C 8.0 0.001 7.0 1.0 3.0 4.0 7.0 2.0 5.0 6.0 0 1 2 3 4 5 Peak Pulse Current, IPP (A) Reverse Voltage, (V) Fig.5 - Capacitance Between Terminals Characteristics 35.0 ff==11MMHHzz TATA==2255CC 30.0 25.0 20.0 0 1 2 3 4 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 2 QW-JP027 Comchip Technology CO., LTD. Capacitance Between Terminals, (PF) Clamping Voltage,VC (V) Percentage of Ipp Power Rating, (%) Reverse Current, (uA)