Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight: 0.008 grams 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) Diagram: 0.004(0.10) max Collector 0.020(0.50) 0.020(0.50) 3 0.012(0.30) 0.012(0.30) 1 Dimensions in inches and (millimeter) Base 2 Emitter Maximum Ratings (at Ta=25C unless otherwise noted) Parameter Symbol Value Units Collector-Base voltage VCBO 75 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 6.0 V 600 Collector current-continuous IC mA Power dissipation PC 300 mW Thermal resistance, junction to ambient R JA 417 C/W Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR30 Page 1 Comchip Technology CO., LTD.Small Signal Transistor Electrical Characteristics ( TA=25C unless otherwise noted) Parameter Symbol Conditions Min. Max. Units Collector-Base breakdown voltage IC=10 A, IE=0 V(BR)CBO 75 V Collector-Emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 40 V Emitter-Base breakdown voltage V(BR)EBO IE=10 A, IC=0 6 V VCB=60V, IE=0 A Collector cut-off current ICBO 0.01 Collector cut-off current ICEO VCE=30V, VBE(off)=3V 0.01 A A Emitter cut-off current IEBO VEB=3V, IC=0 0.1 hFE(1) VCE=10V, IC=150mA 100 300 DC current gain hFE(2) VCE=10V, IC=0.1mA 40 hFE(3) VCE=10V, IC=500mA 42 IC=150mA, IB=15mA 0.3 Collector-Emitter saturation voltage VCE(sat) V IC=500mA, IB=50mA 1 IC=150mA, IB=15mA 1.2 Base-Emitter saturation voltage VBE(sat) V IC=500mA, IB=50mA 2.0 VCE=20V, IC=20mA Transition frequency fT 300 MHz f=100MHz Delay time (see fig.1) td 10 nS VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA Rise time (see fig.1) tr 25 nS Storage time (see fig.2) ts 225 nS VCC=30V, IC=150mA IB1=-IB2=15mA Fall time (see fig.2) tf 60 nS Notes: 1. Pulse test: Pulse Width 300s, Duty Cycle 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR30 Page 2 Comchip Technology CO., LTD.