SMD Schottky Barrier Rectiers SS34-HF Thru. SS320-HF Reverse Voltage: 40 to 200 Volts Forward Current: 3.0 Amp RoHS Device DO-214AC (SMA) Halogen Free 0.063 (1.60) Features 0.106 (2.70) 0.051 (1.30) 0.090 (2.30) - Metal silicon junction, majority carrier conduction - For surface mounted applications 0.177 (4.50) 0.157 (4.00) - Low power loss, high eciency - High forward surge current capability - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 0.087 (2.20) 0.075 (1.90) Mechanical data 0.012(0.30) 0.059 (1.50) TYP. 0.035 (0.90) 0.205 (5.20) - Case: SMA 0.185 (4.70) - Terminals: Solderable per MIL-STD-750, Method 2026 Dimensions in inches and (millimeter) - Approx. Weight: 60mg / 0.0021oz Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS34 SS36 SS310 SS315 SS320 Units Maximum repetitive peak reverse voltage VRRM 40 60 100 150 200 V Maximum RMS voltage VRMS 28 42 70 105 140 V Maximum DC blocking voltage VDC 40 60 100 150 200 V Maximum average forward rectied current IF(AV) 3.0 A Peak forward surge current, 8.3ms single half sine-wave superimposed IFSM 80 A on rated load (JEDEC method) Max instantaneous forward voltage at 3 A VF 0.55 0.70 0.85 0.95 V Maximum DC reverse current Tj = 25 C 0.5 0.3 IR mA at rated DC reverse voltage Tj = 100 C 5 3 Typical junction capacitance (Note 1) Cj pF 450 400 Typical thermal resistance (Note 2) R JA 70 C/W Operating junction temperature range Tj -55 ~ +125 C Storage temperature range Tstg -55 ~ +150 C Notes: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C 2. P.C.B. mounted with 2.0 X 2.0 (5 X 5 cm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:B SP-JB016 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Rectiers Rating and Characteristic Curves (SS34-HF Thru. SS320-HF) Fig.2 - Typical Reverse Characteristics Fig.1 - Forward Current Derating Curve 4 3.5 10 3.0 TJ=100 C 3 10 2.4 TJ=75 C 2 1.8 10 40V-60V 1.2 100V-200V 1 10 0.6 TJ=25 C Single phase half-wave 60 Hz resistive or inductive load 0 0.0 10 25 50 75 100 125 150 0 20 40 60 80 100 Case Temperature ( C) Percent of Rated Peak Reverse Voltage % Fig.3 - Typical Forward Characteristic Fig.4 - Typical Junction Capacitance TTJJ=25=25 CC 20 10001000 10 500500 200200 100100 1.0 40V 60V 100V 2020 40V~60VSS32F~SS36F 150V/200V 100V~200VSS38F~SS320F 0.1 1010 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.10.1 11 1010 100100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 - Maximum Non-Repetitive Peak Fig.5 - Typical Transient Thermal Impedance Forward Surge Current 100 100 80 60 10 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz t, Pulse Duration sec Company reserves the right to improve product design , functions and reliability without notice. REV:B SP-JB016 Page 2 Comchip Technology CO., LTD. Peak Forward Surge Current (A) Average Forward Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current ( A) Transient Thermal Impedance C / W) Junction Capacitance (pF)