X-On Electronics has gained recognition as a prominent supplier of 2DA1201YQTC Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2DA1201YQTC Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2DA1201YQTC Diodes Incorporated

2DA1201YQTC electronic component of Diodes Incorporated
2DA1201YQTC Diodes Incorporated
2DA1201YQTC Bipolar Transistors - BJT
2DA1201YQTC  Semiconductors

Images are for reference only
See Product Specifications
Part No. 2DA1201YQTC
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 120V PNP Trans 100mA -0.8V PWR
Datasheet: 2DA1201YQTC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.0975 ea
Line Total: USD 390 
Availability - 3880
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
3880
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 4000
Multiples : 4000
4000 : USD 0.0975
8000 : USD 0.0921
12000 : USD 0.0912
16000 : USD 0.0905
20000 : USD 0.0885

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2DA1201YQTC from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2DA1201YQTC and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated 2DA1201Y 120V PNP SILICON TRANSISTOR IN SOT89 Features Mechanical Data Case: SOT89 BV > -120V CEO Case material: molded plastic. Green molding compound. Max Continuous Current I = -0.8A C UL Flammability Rating 94V-0 High Gain Holds up h 120 I = -100mA FE C Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads, Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.05 grams (Approximate) PPAP capable (Note 4) SOT89 C E B C C B E Top View Top View Device Symbol Pin Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel 2DA1201Y-7 AEC-Q101 1T2 7 12 1,000 2DA1201YQTC Automotive 1T2 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated 2DA1201Y Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -120 V CBO Collector-Emitter Voltage V -120 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -800 mA C Peak Pulse Current (Note 6) I -3 A CM Base Current I -160 mA B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) 1.5 W P D Thermal Resistance, Junction to Ambient (Note 7) 83 R C/W JA Thermal Resistance, Junction to Leads (Note 8) 18.3 R C/W JL Operating and Storage Temperature Range -55 to +150 T T C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 7. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 August 2012 2DA1201Y Diodes Incorporated www.diodes.com Document number: DS35644 Rev: 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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