2DA1213YQ-13 Diodes Incorporated

2DA1213YQ-13 electronic component of Diodes Incorporated
2DA1213YQ-13 Diodes Incorporated
2DA1213YQ-13 Bipolar Transistors - BJT
2DA1213YQ-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2DA1213YQ-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2DA1213YQ-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2DA1213YQ-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 2.5K
Datasheet: 2DA1213YQ-13 Datasheet (PDF)
Price (USD)
1: USD 0.9375 ea
Line Total: USD 0.94 
Availability : 2597
  
Ship by Wed. 22 Oct to Fri. 24 Oct
QtyUnit Price
1$ 0.9375
10$ 0.5812
100$ 0.3473
500$ 0.253
1000$ 0.2266
2500$ 0.2046
5000$ 0.1727
10000$ 0.1705

Availability 2597
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9375
10$ 0.5812
100$ 0.3473
500$ 0.253
1000$ 0.2266
2500$ 0.2046
5000$ 0.1727
10000$ 0.1705

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2DA1213YQ-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2DA1213YQ-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2DA1213YQ 50V PNP POWER SWITCHING TRANS ISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT89 stringent requirement of Automotive Applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per Features MIL-STD-202, Method 208 BV > -50V Weight: 0.052 grams (Approximate) CEO I = -2A High Continuous Collector Current C High Gain Hold up Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The 2DA1213YQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. 2DA1213YQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage -6 V VEBO Continuous Collector Current -2 A IC Peak Pulse Current -2.5 A ICM Base Current I -500 mA B Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1 W D Thermal Resistance, Junction to Ambient (Note 5) 125 C/W RJA Thermal Resistance, Junction to Leads (Note 6) 18.3 C/W RJL Operating and Storage Temperature Range -55 to +150 TJ, TSTG C Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in steady state condition. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Characteristics and Derating Information 120 1.0 100 0.8 80 0.6 D=0.5 60 0.4 40 Single Pulse D=0.2 0.2 D=0.05 20 D=0.1 0.0 0 0 25 50 75 100 125 150 100 1m 10m 100m 1 10 100 1k 100 o Pulse Width (s) Temperature ( C) Transient Thermal Impedance Derating Curve 100 o Single Pulse. T =25 C A 10 1 100100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 2 of 6 2DA1213YQ December 2019 Diodes Incorporated www.diodes.com Document Number: DS41104 Rev. 2 - 2 Max Power Dissipation (W) Max Power Dissipation (W) o Thermal Resistance ( C/W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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