PART OBSOLETE - USE FCX717 2DB1697 12V LOW V PNP SURFACE MOUNT TRANSISTOR CE(sat) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020D Complementary NPN Type Available (2DD2661) Terminals: Finish Matte Tin annealed over Copper leadframe Totally Lead-Free & Fully RoHS compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 2) Weight: 0.052 grams (approximate) COLLECTOR 3 E SOT89 2, 4 C 4 2 C 1 BASE 1 B 3 EMITTER Top View Device Schematic Top View Pin Out Configuration Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel 2DB1697-13 1697 13 12 2500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at 2DB1697 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -15 V CBO Collector-Emitter Voltage -12 V V CEO Emitter-Base Voltage -6 V V EBO Peak Pulse Current -4 A ICM Continuous Collector Current I -2 A C Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 0.9 W D Thermal Resistance, Junction to Ambient Air (Note 4) 139 C/W R JA Power Dissipation (Note 5) 2 W P D Thermal Resistance, Junction to Ambient Air (Note 5) 62.5 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V -15 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 6) -12 V V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -6 V V I = -100A, I = 0 (BR)EBO E C Collector Cut-Off Current -0.1 I A V = -15V, I = 0 CBO CB E Emitter Cut-Off Current -0.1 I A V = -6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 6) Collector-Emitter Saturation Voltage -65 -180 mV V I = -1A, I = -50mA CE(SAT) C B DC Current Gain h 270 680 V = -2V, I = -200mA FE CE C SMALL SIGNAL CHARACTERISTICS V = -10V, I = 0, CB E Output Capacitance 40 pF C obo f = 1MHz V = -2V, I = -100mA, CE C Current Gain-Bandwidth Product 140 MHz f T f = 100MHz Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 5. Device mounted on FR-4 PCB with 1 inch copper pad layout. 6. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2 of 5 June 2021 2DB1697 Diodes Incorporated www.diodes.com Document number: DS31618 Rev. 4 - 4 OBSOLETE PART DISCONTINUED