EMITTER 2DD1766P/Q/R NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (2DB1188) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L 2,4 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 1 Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.072 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 32 V CEO Emitter-Base Voltage 5 V V EBO Peak Pulse Current 2.5 A I CM Continuous Collector Current I 2 A C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R 125 C/W A JA Operating and Storage Temperature Range -55 to +150 C T , T j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 40 V I = 50A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 32 V I = 1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 50A, I = 0 (BR)EBO E C Collector Cut-Off Current I 1 A V = 20V, I = 0 CBO CB E Emitter Cut-Off Current I 1 A V = 4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage V 0.3 0.8 V I = 2A, I = 0.2A CE(SAT) C B 82 180 2DD1766P DC Current Gain 2DD1766Q h 120 270 V = 3V, I = 0.5A FE CE C 2DD1766R 180 390 SMALL SIGNAL CHARACTERISTICS V = 5V, I = -50mA, CE E Transition Frequency 220 MHz f T f = 100MHz V = 10V, I = 0, CB E Output Capacitance C 13 pF ob f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) V = 3V CE I/I = 10 T = 150C CB A T = 85C A T = 25C A T = 150C A T = -55C A T = 25C A T = 85C A T = -55C A 0.001 0.01 0.1 1 10 T = -55C A T = -55C A T = 25C A T = 25C A T = 85C A T = 85C A T = 150C I/I = 10 V = 3V A CB CE T = 150C A DS31167 Rev. 4 - 2 2 of 4 2DD1766P/Q/R Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D