X-On Electronics has gained recognition as a prominent supplier of APT13003DU-G1 BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. APT13003DU-G1 BIPOLAR TRANSISTORS - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

APT13003DU-G1 Diodes Incorporated

APT13003DU-G1 electronic component of Diodes Incorporated
Images are for reference only
See Product Specifications
Part No.APT13003DU-G1
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 20W
Datasheet: APT13003DU-G1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 4000
Multiples : 1
4000 : USD 0.1743
40000 : USD 0.1711
400000 : USD 0.151
2000000 : USD 0.1379
4000000 : USD 0.1376
N/A

Obsolete
0 - WHS 2

MOQ : 4000
Multiples : 4000
4000 : USD 0.1655
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.5471
10 : USD 0.4141
100 : USD 0.2238
1000 : USD 0.1679
4000 : USD 0.1455
8000 : USD 0.1356
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the APT13003DU-G1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT13003DU-G1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

PART OBSOLETE NO ALTERNATE PART APT13003D Green 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BV > 450V Case: TO126 or TO251 CEO BV > 700V Case Material: Molded Plastic,Gree Molding Compound CES BV > 9V UL Flammability Classification Rating 94V-0 EBO I = 1.5A High Continuous Collector Current Terminals: Matte Tin Finish Solderable per MIL-STD-202, C Integrated Collector-Emitter Diode to Act as Free-Wheeling Method 208 Diode Weight: TO126: 400mg (Approximate) Anti-saturation for Faster Switching TO251: 340mg (Approximate) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. APT13003D Marking Information TO126 TO251 = Manufacturers code marking For TO126, GU13003D = Product Type Marking ID APT13003D For TO251, APT13003DI-G1= Product Type Marking ID I-G1 YWW = Date Code Marking YWW8XX e.g. 312 = Year 2013, Week 12. GU13003D 8 = Assembly site code YWW8XX XX = Batch Number Front Face View Front Face View Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 700 V Collector-Emitter Voltage (V = 0V) V BE CES Collector-Emitter Voltage 450 V V CEO Emitter-Base Voltage V 9 V EBO Continuous Collector Current I 1.5 A C Peak Pulse Collector Current I 3 A CM Continuous Base Current I 0.75 A B Peak Pulse Base Current I 1.5 A BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit For TO126 T = +25C 20 C Power Dissipation W P D For TO251 T = +25C 24 C For TO126 96 Thermal Resistance, Junction to Ambient Air C/W R JA For TO251 110 For TO126 6.25 Thermal Resistance, Junction to Case C/W R JC For TO251 5.0 Operating and Storage Temperature Range T T -65 to +150 C J, STG ESD Ratings (Note 5) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Note: 5. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 6 February 2020 APT13003D Diodes Incorporated www.diodes.com Datasheet Number: DS42590 Rev. 1 - 4 OBSOLETE PART DISCONTINUED

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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