X-On Electronics has gained recognition as a prominent supplier of APT13005SU-G1 BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. APT13005SU-G1 BIPOLAR TRANSISTORS - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

APT13005SU-G1 Diodes Incorporated

APT13005SU-G1 electronic component of Diodes Incorporated
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See Product Specifications
Part No.APT13005SU-G1
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
Datasheet: APT13005SU-G1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.5984
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.4398
10 : USD 0.6443
100 : USD 0.2853
1000 : USD 0.2212
4000 : USD 0.1885
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the APT13005SU-G1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT13005SU-G1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

APT13005S Green 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BV > 450V Case: TO126, TO251 or ITO220AB CEO BV > 700V Case Material: Molded Plastic,Gree Molding Compound CES BV > 9V UL Flammability Classification Rating 94V-0 EBO I = 3.2A High Continuous Collector Current Terminals: Matte Tin Finish Solderable per MIL-STD-202, C Lead-Free Finish RoHS Compliant (Notes 1 & 2) Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: TO126: 400mg (Approximate) TO251: 340mg (Approximate) ITO220AB: 1500mg (Approximate) Applications Low Power AC-DC SMPS for: Battery Chargers for Mobile Phone / Tablets / Smartphones Power Supply for DVD / STB LED Lighting TO126 TO251 ITO220AB Isolated C B E B C E B C E B C E Front Face View Front Face View Front Face View Device Schematic Pin-Out Pin-Out Pin-Out Ordering Information (Note 4) Product Package Marking Quantity APT13005SU-G1 TO126 GU13005S 4,000 Bulk, Loose per Box APT13005SI-G1 TO251 APT13005SI-G1 3,600 per Box in Tubes APT13005STF-G1 ITO220AB APT13005STF-G1 1,000 per Box in Tubes Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See APT13005S Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 700 V Collector-Emitter Voltage (V = 0V) V BE CES Collector-Emitter Voltage 450 V V CEO Emitter-Base Voltage 9 V V EBO Continuous Collector Current I 3.2 A C Peak Pulse Collector Current I 6.4 A CM Continuous Base Current I 1.6 A B Peak Pulse Base Current I 3.2 A BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit For TO126 T = +25C 20 C Power Dissipation For TO251 T = +25C P 25 W C D For ITO220AB T = +25C 28 C For TO126 6.25 Thermal Resistance, Junction to Case For TO251 5.0 C/W R JC For ITO220AB 4.5 Operating and Storage Temperature Range T T -65 to +150 C J, STG ESD Ratings (Note 5) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Note: 5. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 8 APT13005S November 2015 Diodes Incorporated www.diodes.com Datasheet Number: DS36309 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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