BC807-16W/ -25W/ -40W 45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817-xxW) UL Flammability Classification Rating 94V-0 For Switching and AF Amplifier Applications Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Terminals: Finish Matte Tin Plated Leads, Solderable per Halogen and Antimony Free.Gree Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight 0.006 grams (approximate) SOT323 C B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel BC807-16W-7 K5A 7 8 3,000 BC807-25W-7 K5B 7 8 3,000 BC807-40W-7 K5C 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC807-16W/ -25W/ -40W Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -6 V EBO Continuous Collector Current I -500 mA C Peak Collector Current I -1.0 A CM Peak Base Current I -200 mA BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 625 C/W JA Operating and Storage Temperature Range T T -65 to +150 C J, STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Emitter Breakdown Voltage (Note 7) BV -45 V I = -10mA CEO C Emitter-Base Breakdown Voltage BV -6 V I = -100A EBO C -100 nA V = -45V CE Collector-Emitter Cutoff Current I CES -5.0 A V = -25V, T = +150C CE J V = -20V -100 nA CB Collector I CBO -5.0 A V = -20V, T = +150C CB J Emitter-Base Cutoff Current I -100 nA V = -5V EBO EB BC807-16W-7 100 250 BC807-25W-7 160 400 I = -100mA, V = -1.0V C CE 250 600 BC807-40W-7 DC Current Gain (Note 7) h FE BC807-16W-7 60 BC807-25W-7 100 I = -300mA, V = -1.0V C CE BC807-40W-7 170 Collector-Emitter Saturation Voltage (Note 7) V -700 mV I = -500mA, I = -50mA CE(sat) C B Base-Emitter Voltage (Note 7) V -1200 mV I = -300mA, V = -1.0V BE C CE V = -5.0V, I = -10mA, CE C Gain Bandwidth Product f 100 MHz T f = 50MHz Collector-Base Capacitance C 12 pF V = -10V, f = 1.0MHz CBO CB Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 November 2013 BC807-16W/-25W/-40W Diodes Incorporated www.diodes.com Document Number: DS30577 Rev. 7 - 2