DCP68/-25 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DCP69) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR Case: SOT-223 2,4 3 E Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 2 C C 4 1 Moisture Sensitivity: Level 1 per J-STD-020D BASE Terminals: Finish - Matte Tin annealed over Copper leadframe 1 B 3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 EMITTER Marking Information: See Page 3 TOP VIEW Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.115 grams Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Collector-Base Voltage V 25 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage 5.0 V V EBO Collector Current 1.0 A I C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation T = 25C (Note 3) P A D Thermal Resistance, Junction to Ambient Air T = 25C (Note 3) 125 C/W A R JA Operating and Storage Temperature Range -55 to 150 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Emitter Breakdown Voltage V 25 V I = 100A, I = 0 (BR)CES C E Collector-Emitter Breakdown Voltage V 20 V I = 1.0mA, I = 0 (BR)CEO C B Collector-Base Breakdown Voltage V 25 V I = 10A, I = 0 (BR)CBO C E Emitter-Base Breakdown Voltage V 5.0 V I = 10A, I = 0 (BR)EBO E C Collector-Base Cutoff Current 100 nA I V = 25V, I = 0 CBO CB E Emitter-Base Cutoff Current 10 I A V = 5.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 50 V = 10V, I = 5.0mA CE C DCP68, DCP68-25 60 V = 1.0V, I = 1.0A CE C DC Current Gain h FE DCP68 85 375 V = 1.0V, I = 500mA CE C DCP68-25 160 375 V = 1.0V, I = 500mA CE C Collector-Emitter Saturation Voltage V 0.5 V I = 1.0A, I = 100mA CE(SAT) C B Base-Emitter Turn-On Voltage V 1.0 V V = 1.0V, I = 1.0A BE (ON) CE C SMALL SIGNAL CHARACTERISTICS I = 100mA, V = 5.0V C CE Current Gain-Bandwidth Product f 330 MHz T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree Policy can be found on our website at 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 02 4 6 810 V , COLLECTOR EMITTER VOLTAGE (V) CE 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) C DS30797 Rev. 6 - 2 2 of 4 DCP68/-25 Diodes Incorporated www.diodes.com NEW PRODUCT V , BASE EMITTER TURN-ON VOLTAGE (V) BE(ON) V , COLLECTOR EMITTER CE(SAT) V , BASE EMITTER SATURATION VOLTAGE (V) I, COLLECTOR CURRENT (A) BE(SAT) C SATURATION VOLTAGE (V)