EMITTER PART OBSOLETE - USE BCX6825 DCX68/-25 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DCX69) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L 2,4 Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D 1 Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.072 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 25 V V CBO Collector-Emitter Voltage 20 V V CEO Emitter-Base Voltage 5.0 V V EBO Collector Current 1.0 A I C Peak Pulse Current I 2.0 A CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D 125 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage 25 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 20 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 5.0 V V I = 100A, I = 0 (BR)EBO E C 0.1 V = 25V, I = 0 CB E Collector-Base Cutoff Current I A CBO 10 V = 25V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I 10 A V = 5.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 50 V = 10V, I = 5.0mA CE C DCX68, DCX68-25 60 V = 1.0V, I = 1.0A CE C DC Current Gain h FE DCX68 85 375 V = 1.0V, I = 500mA CE C DCX68-25 160 375 V = 1.0V, I = 500mA CE C Collector-Emitter Saturation Voltage 0.5 V V I = 1.0A, I = 100mA CE(SAT) C B Base-Emitter Turn-On Voltage V 1.0 V I = 1.0A, V = 1.0V BE(ON) C CE SMALL SIGNAL CHARACTERISTICS V = 5.0V, I = 100mA, CE C Current Gain-Bandwidth Product 330 MHz f T f = 100MHz Output Capacitance C 25 pF V = 10V, I = 0, f = 1MHz obo CB E Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DCX68/-25 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 V , COLLECTOR EMITTER VOLTAGE (V) CE 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) C 2 of 5 May 2021 DCX68/-25 Diodes Incorporated www.diodes.com Document number: DS31163 Rev. 5 - 4 OBSOLETE PART DISCONTINUED V , BASE EMITTER TURN-ON VOLTAGE (V) BE(ON) V , BASE EMITTER SATURATION VOLTAGE (V) I , COLLECTOR CURRENT (A) BE(SAT) C V , COLLECTOR EMITTER CE(SAT) SATURATION VOLTAGE (V)