DNLS320EDNLS320E LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction 3 Low Collector-Emitter Saturation Resistance R = 80m at 3A CE(SAT) 2 1 High DC Current Gain h > 400 at I = 2A FE C Complementary PNP Type Available (DPLS325E) Ideally Suited for Automated Assembly Processes 4 Ideal for Medium Power Switching or Amplification Applications SOT-223 Lead Free By Design/RoHS Compliant (Note 1) COLLECTOR Gree Device (Note 2) 2,4 Mechanical Data 1 BASE Case: SOT-223 Case Material: Molded Plastic,Gree Molding Compound. 3 UL Flammability Classification Rating 94V-0 EMITTER TOP VIEW Moisture Sensitivity: Level 1 per J-STD-020D Schematic and Pin Configuration Terminals: Finish Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.112 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5 V EBO Continuous Collector Current I 3 A C Peak Pulse Current 8 A I CM Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation T = 25C (Note 3) P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 125 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics Collector-Base Breakdown Voltage V 20 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 20 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current I 100 nA V = 16V, I = 0 CBO CB E Emitter Cutoff Current I 100 nA V = 4V, I = 0 EBO EB C On Characteristics (Note 4) I = 0.1A, I = 0.5mA 0.04 0.10 C B Collector-Emitter Saturation Voltage 0.18 0.50 V V I = 2A, I = 10mA CE(SAT) C B 0.24 0.45 I = 3A, I = 20mA C B Base-Emitter Saturation Voltage V 0.9 V I = 1A, I = 10mA BE(SAT) C B Base-Emitter Turn-On Voltage V 0.9 V V = 2V, I = 1A BE(ON) CE C V = 2V, I = 0.1A 500 CE C DC Current Gain 400 h V = 2V, I = 2A FE CE C 150 V = 2V, I = 6A CE C AC Characteristics Transition Frequency f 150 MHz V = 5V, I = 50mA, f = 50MHz T CE C Input Capacitance C 230 pF V = 0.5V, f = 1MHz ibo EB Output Capacitance C 23 pF V = 10V, f = 1MHz obo CB t V = 10V, I = 500mA on 26 ns CC C Switching Times 220 ns t I = -I = 50mA off B1 B2 Notes: 4. Pulse Test: Pulse width 300s. Duty cycle 2.0%. 1.0 3.5 3.0 I = 5mA B 0.8 2.5 I = 4mA B 0.6 2.0 I = 3mA B 1.5 0.4 I = 2mA B 1.0 0.2 I = 1mA B 0.5 0 0 0 25 50 100 125 150 75 01 2 3 4 5 T , AMBIENT TEMPERATURE (C) A V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DS31326 Rev. 3 - 2 2 of 4 DNLS320E Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) D I, COLLECTOR CURRENT (A) C