DPLS160V LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Complementary NPN Type Available (DNLS160V) Surface Mount Package Suited for Automated Assembly Ultra Small Surface Mount Package Lead Free/RoHS Compliant (Note 1) Green Devic (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT-563 Mechanical Data 65 4 1, 2, 5, 6 Case: SOT-563 Case Material: Molded Plastic, Green Molding 3 Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D 4 12 3 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.003 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO Collector Current - Continuous I -1 A C Peak Pulse Collector Current -2 A I CM Base Current (DC) -300 mA I B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 300 mW A D 417 Thermal Resistance, Junction to Ambient (Note 3) T = 25C R C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage -80 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -60 V V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 (BR)EBO E C -100 nA V = -60V, I = 0 CB E Collector Cutoff Current I CBO -50 A V = -60V, I = 0, T = 150C CB E A Collector Cutoff Current I -100 nA V = -60V, V = 0 CES CE BE Emitter Cutoff Current I -100 nA V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) V = -5V, I = -1mA 200 325 CE C DC Current Gain h 150 250 V V = -5V, I = -500mA FE CE C 100 180 V = -5V, I = -1A CE C I = -100mA, I = -1mA -90 -160 C B Collector-Emitter Saturation Voltage -90 -175 mV V I = -500mA, I = -50mA CE(SAT) C B -160 -330 I = -1A, I = -100mA C B Collector-Emitter Saturation Resistance R 160 330 m I = -1A, I = -100mA CE(SAT) C B Base-Emitter Saturation Voltage -0.95 -1.1 V V I = -1A, I = -50mA BE(SAT) C B Base-Emitter Turn On Voltage -0.82 -0.9 V V V = -5V, I = -1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance C 10 15 pF V = -10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product f 150 220 MHz V = -10V, I = -50mA, f = 100MHz T CE C SWITCHING CHARACTERISTICS Turn-On Time t 36 ns on Delay Time 12 ns t d Rise Time 24 ns t V = -10V r CC Turn-Off Time t 163 ns I = -0.5A, I = I = -25mA off C B1 B2 Storage Time t 132 ns s Fall Time t 31 ns f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 400 1.5 350 I = -10mA B 1.2 300 I = -8mA B 250 I = -6mA B 0.9 200 I = -4mA B 0.6 150 I = -2mA B 100 0.3 50 0 0 200 0 25 50 75 100 125 150 175 0 123 4 5 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) A CE Fig. 2 Typical Collector Current Fig. 1 Maximum Power Dissipation vs. vs. Collector-Emitter Voltage Ambient Temperature DS31251 Rev. 3 - 2 2 of 4 DPLS160V Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C