DPLS320A LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary NPN Type Available (DNLS320A) Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT-23 Mechanical Data C Case: SOT-23 Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 B E Marking Information: See Page 3 Schematic and Pin Configuration Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -5 A CM Repetitive Peak Pulse Current (Note 3) -3 A I CRP Continuous Collector Current -2 A I C Base Current I -0.5 A B Thermal Characteristics Characteristic Symbol Value Unit 600 mW Power Dissipation (Note 4) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 209 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 5) -100 nA V = -20V, I = 0 CB E Collector-Base Cutoff Current I CBO -50 A V = -20V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I -100 nA V = -5V, I = 0 EBO EB C Collector-Base Breakdown Voltage V -20 V I = -100A (BR)CBO C Collector-Emitter Breakdown Voltage V -20 V I = -10mA (BR)CEO C Emitter-Base Breakdown Voltage V -5 V I = -100A (BR)EBO E ON CHARACTERISTICS (Note 5) 220 V = -2V, I = -0.1A CE C 220 V = -2V, I = -0.5A CE C DC Current Gain h 200 FE V = -2V, I = -1A CE C 150 V = -2V, I = -2A CE C 100 V = -2V, I = -3A CE C -80 I = -0.5A, I = -50mA C B -150 I = -1A, I = -50mA C B Collector-Emitter Saturation Voltage mV V -250 I = -2A, I = -100mA CE(SAT) C B -230 I = -2A, I = -200mA C B -330 I = -3A, I = -300mA C B Equivalent On-Resistance R 90 115 m I = -2A, I = -200mA CE(SAT) E B -1.1 V I = -2A, I = -100mA C B Base-Emitter Saturation Voltage V BE(SAT) -1.2 V I = -3A, I = -300mA C B Base-Emitter Turn-on Voltage -1.2 V V V = -2V, I = -1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = -5V, I = -100mA, CE C Transition Frequency f 100 215 MHz T f = 100MHz Output Capacitance C 50 pF V = -10V, f = 1MHz ob CB Notes: 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 800 2.5 I = -10mA B Note 3 700 2.0 I = -8mA B 600 500 I = -6mA B 1.5 400 I = -4mA B 1.0 300 200 I = -2mA B 0.5 100 0 0 200 0 25 50 75 100 125 150 175 0 123 4 5 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1, Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DS31339 Rev. 4 - 2 2 of 4 DPLS320A Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) D -I , COLLECTOR CURRENT (A) C