DSS4140U LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Collector-Emitter Saturation Voltage, V CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020D Complementary PNP Type Available (DSS5140U) Terminals: Finish Matte Tin annealed over Copper Plated Ultra-Small Surface Mount Package Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Green Devic (Note 2) Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 5 V EBO Collector Current - Continuous I 1 A C Peak Pulse Collector Current I 2 A CM Peak Base Current I 1 A BM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 400 mW A D Thermal Resistance, Junction to Ambient (Note 3) T = 25C 313 C/W A R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DSS4140U Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 40 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 5) V 40 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C 100 nA V = 40V, I = 0 CB E Collector Cutoff Current I CBO 50 A V = 40V, I = 0, T = 150C CB E A Collector Cutoff Current 100 nA I V = 40V, V = 0 CES CE BE Emitter Cutoff Current 100 nA I V = 5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) V = 5V, I = 1mA 300 CE C DC Current Gain h 300 900 V = 5V, I = 500mA FE CE C 200 V = 5V, I = 1A CE C 200 I = 100mA, I = 1mA C B Collector-Emitter Saturation Voltage V 250 mV I = 500mA, I = 50mA CE(SAT) C B 500 I = 1A, I = 100mA C B Collector-Emitter Saturation Resistance R 500 m I = 1A, I = 100mA CE(SAT) C B Base-Emitter Saturation Voltage V 1.2 V I = 1A, I = 100mA BE(SAT) C B Base-Emitter Turn On Voltage 1.1 V V V = 5V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS Output Capacitance 9 pF C V = 10V, f = 1.0MHz obo CB Current Gain-Bandwidth Product 150 MHz f V = 10V, I = 50mA, f = 100MHz T CE C SWITCHING CHARACTERISTICS Turn-On Time 60 ns t on Delay Time t 30 ns d Rise Time t 30 ns V = 10V r CC Turn-Off Time t 380 ns I = 0.5A, I = I = 25mA off C B1 B2 Storage Time t 350 ns s Fall Time t 30 ns f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 500 10 Pw = 1ms 400 Pw = 10ms 1 300 0.1 Pw = 100ms 200 DC 0.01 100 R = 313C/W JA 0.001 0 0 25 50 75 100 125 150 0.1 1 10 100 V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) A CE Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. vs. Collector-Emitter Voltage (Note 3) Ambient Temperature (Note 3) 2 of 5 March 2009 DSS4140U Diodes Incorporated www.diodes.com Document number: DS31689 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (mW) D I, COLLECTOR CURRENT (A) C