DSS8110Y-7 Diodes Incorporated

DSS8110Y-7 electronic component of Diodes Incorporated
DSS8110Y-7 Diodes Incorporated
DSS8110Y-7 Bipolar Transistors - BJT
DSS8110Y-7  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DSS8110Y-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS8110Y-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. DSS8110Y-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIPOLAR TRANS NPN
Datasheet: DSS8110Y-7 Datasheet (PDF)
Price (USD)
3000: USD 0.0936 ea
Line Total: USD 280.8 
Availability : 2910
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
3000$ 0.0936
6000$ 0.0837
9000$ 0.0719
24000$ 0.0587

Availability 34117
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4375
10$ 0.2713
100$ 0.1644
500$ 0.1122
1000$ 0.0968
3000$ 0.0814
6000$ 0.0737
9000$ 0.0682
24000$ 0.0638


Availability 2910
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0936
6000$ 0.0837
9000$ 0.0719
24000$ 0.0587


Availability 2897
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 2752
Multiples : 1
QtyUnit Price
2752$ 0.0945

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Collector-Emitter Voltage
Emitter-Base Voltage
Frequency
Pin Count
Mounting
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Number Of Elements
Category
Power Dissipation
Package Type
Collector Current Dc
Collector-Base Voltage
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS8110Y-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS8110Y-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data BV > 100V Case: SOT363 CEO I = 1A high Continuous Collector Current C Case Material: Molded Plastic, Green Molding Compound. I = 3A Peak Pulse Current CM UL Flammability Classification Rating 94V-0 R = 200m for a Low Equivalent On-Resistance CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage V < 200mV 1A CE(sat) Terminals: Finish - Matte Tin Plated Leads. Solderable per Complementary PNP Type Available (DSS9110Y) e3 MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Weight: 0.006 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT-363 C CC E B E CC B Top View Device Symbol Pin-Out Top Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS8110Y-7 ZN5 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DSS8110Y Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage V 100 V CEO Emitter-Base Voltage V 5 V EBO Collector Current - Continuous I 1 A C Peak Pulse Collector Current 3 A I CM Base Current Continuous 0.3 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 625 mW D Thermal Resistance, Junction to Ambient (Note 5) 200 C/W R JA Thermal Resistance, Junction to Lead (Note 6) 81 C/W R JL Operating and Storage Temperature Range -55 to +150 C T , T J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (at the end of collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 July 2014 DSS8110Y Diodes Incorporated www.diodes.com Document number: DS31679 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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