DZT853 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DZT953) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR Case: SOT-223 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper Leadframe BASE (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 TOP VIEW EMITTER Ordering Information: See Page 3 Weight: 0.115 grams (approximate) Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 200 V CBO Collector-Emitter Voltage V 100 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 6 A C 1 (Note 3) Power Dissipation P W tot 3 (Note 4) Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 200 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 100 V I = 10mA*, I B = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I = 100A, I = 0 (BR)EBO E C 10 nA V = 150V, I = 0 CB E Collector Cutoff Current I CBO 1 A V = 150V, I = 0, T = 100C CB E A Emitter Cutoff Current I 10 nA V = 6V, I = 0 EBO EB C ON CHARACTERISTICS 50 I = 0.1A, I = 5mA* B C B Collector-Emitter Saturation Voltage V 150 mV I = 2A, I = 100mA*B CE(SAT) C B 340 I = 5A, I = 500mA* B C B Base-Emitter Saturation Voltage V 1250 mV I = 5A, I = 500mA* B BE(SAT) C B Base-Emitter Turn-On Voltage V 1100 mV I = 5A, V = 2V* BE(ON) CE CE 100 I = 10mA, V = 2V* C CE 300 100 I = 2A, V = 2V* C CE DC Current Gain h FE 50 I = 4A, V = 2V* C CE 20 I = 10A, V = 2V* C CE SMALL SIGNAL CHARACTERISTICS I = 100mA, V = 10V, C CE Current Gain-Bandwidth Product f 130 MHz T f = 50MHz Output Capacitance C 35 pF V = 10V, f = 1MHz obo CB SWITCHING CHARACTERISTICS I = 1A, V = 10V t 50 ns C CC on Switching Times t 1650 ns off I = I = 100mA B1 B2 * Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% Typical Characteristics T = 25C unless otherwise specified amb Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) Fig. 2 Collector Current vs. Collector Emitter-Voltage Notes: 3. Device mounted on FR-4 PCB, pad layout as shown on page 4. DS30737 Rev. 3 - 2 2 of 4 DZT853 Diodes Incorporated www.diodes.com NEW PRODUCT