DZTA92 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary NPN Type Available (DZTA42) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR 2,4 Case: SOT-223 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 1 Moisture Sensitivity: Level 1 per J-STD-020C BASE Terminals: Finish - Matte Tin annealed over Copper Leadframe 3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 EMITTER Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -300 V CBO Collector-Emitter Voltage V -300 V CEO Emitter-Base Voltage -5 V V EBO Base Current -100 mA I B Continuous Collector Current -500 mA I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation T = 25C (Note 3) P 1 W A d Thermal Resistance, Junction to Ambient T = 25C (Note 3) 125 C/W A R JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -300 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -300 V I = -1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5 V V I = -100A, I = 0 (BR)EBO E C Collector-Base Cut-Off Current -0.25 I A V = -200V, I = 0 CBO CB E Emitter-Base Cut-Off Current -0.1 A I V = -3V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage V -0.5 V I = -20mA, I = -2mA CE(SAT) C B Base-Emitter Saturation Voltage V -0.9 V I = -20mA, I = -2mA BE(SAT) C B 25 I = -1mA, V = -10V C CE DC Current Gain h 40 V FE I = -10mA, V = -10V C CE 25 I = -30mA, V = -10V C CE SMALL SIGNAL CHARACTERISTICS Gain-Bandwidth Product f 50 MHz I = -10mA, V = -20V, f = 100MHz T C CE Output Capacitance C 6 pF V = -20V, f = 1MHz obo CB Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at R = 125C JA DS30521 Rev. 4 - 2 2 of 4 DZTA92 Diodes Incorporated www.diodes.com NEW PRODUCT