V - (Volts) h V - (Volts) V - (Volts) Switching time C SOT23 NPN SILICON PLANAR FMMT449 FMMT449 MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES TYPICAL CHARACTERISTICS * Low equivalent on-resistance R 250m at 1A CE(sat) E C tf,tr,td IB1 =IB2 =IC/10 ns 0.8 VCE=10V COMPLEMENTARY TYPE FMMT549 15 0 PARTMARKING DETAIL 449 tf IC/IB =10 0.6 B ts 100 ns tr 80 0 0.4 td ABSOLUTE MAXIMUM RATINGS. 60 0 50 0.2 400 PARAMETER SYMBOL VALUE UNIT ts tf tr 200 ts Collector-Base Voltage V 50 V CBO td 0 0 0 0.001 0.01 0.1 1 10 0. 01 0. 1 1 Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 5V IC - Collector Current (Amps) IC - Collector Current (Amps) EBO Peak Pulse Current I 2A CM VCE(sat) v IC Switching Speeds Continuous Collector Current I 1A C Base Current I 200 mA B Power Dissipation at T = 25C P 500 mW 200 1.8 amb tot 1.6 Operating and Storage Temperature Range T :T -55 to +150 C j stg 160 1.4 IC/IB =10 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 1.2 VCE=2V 120 1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 0.8 Collector-Base V 50 V I =1mA, I =0 (BR)CBO C E 80 0.6 Breakdown Voltage 0.4 40 Collector-Emitter V 30 V I =10mA, I =0* (BR)CEO C B 0.2 Breakdown Voltage 0 0.001 0.01 0.1 1 10 0.00 1 0.01 0.1 1 10 Emitter-Base Breakdown V 5V I =100A, I =0 (BR)EBO E C Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off I 0.1 A V =40V, I =0 CBO CB E hFE v IC VBE(sat) v IC Current 10 A V =40V, T =100C CB amb Emitter Cut-Off Current I 0.1 A V =4V, I =0 EBO EB C 10 Collector-Emitter V 0.5 V I =1A, I =100mA* 1.8 CE(sat) C B Saturation Voltage 1.0 V I =2A, I =200mA* C B 1.6 Base-Emitter V 1.25 V I =1A, I =100mA* 1.4 BE(sat) C B 1 Saturation Voltage VCE=2V 1.2 1.0 Base-Emitter Turn-On V 1.0 V I =1A, V =2V* DC BE(on) C CE 1s 0.8 Voltage 100ms 0.1 10ms 1ms 0.6 100s Static Forward Current h 70 I =50mA, V =2V* FE C CE 0.4 Transfer Ratio 100 300 I =500mA, V =2V* C CE 80 I =1A, V =2V* 0.2 0.01 C CE 0.1 1 10 100 40 I =2A, V =2V* C CE 0.001 0.01 0.1 1 10 Transition f 150 MHz I =50mA, V =10V T C CE IC - Collector Current (Amps) Frequency f=100mHz VCE - Collector Emitter Voltage (V) Output Capacitance C 15 pF V =10V, f=1MHz obo CB VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 107 3 - 106 I -Collector Current (A) V - (Volts) h V - (Volts) V - (Volts) Switching time C SOT23 NPN SILICON PLANAR FMMT449 FMMT449 MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES TYPICAL CHARACTERISTICS * Low equivalent on-resistance R 250m at 1A CE(sat) E C tf,tr,td IB1 =IB2 =IC/10 ns 0.8 VCE=10V COMPLEMENTARY TYPE FMMT549 15 0 PARTMARKING DETAIL 449 tf IC/IB =10 0.6 B ts 100 ns tr 80 0 0.4 td ABSOLUTE MAXIMUM RATINGS. 60 0 50 0.2 400 PARAMETER SYMBOL VALUE UNIT ts tf tr 200 ts Collector-Base Voltage V 50 V CBO td 0 0 0 0.001 0.01 0.1 1 10 0. 01 0. 1 1 Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 5V IC - Collector Current (Amps) IC - Collector Current (Amps) EBO Peak Pulse Current I 2A CM VCE(sat) v IC Switching Speeds Continuous Collector Current I 1A C Base Current I 200 mA B Power Dissipation at T = 25C P 500 mW 200 1.8 amb tot 1.6 Operating and Storage Temperature Range T :T -55 to +150 C j stg 160 1.4 IC/IB =10 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 1.2 VCE=2V 120 1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 0.8 Collector-Base V 50 V I =1mA, I =0 (BR)CBO C E 80 0.6 Breakdown Voltage 0.4 40 Collector-Emitter V 30 V I =10mA, I =0* (BR)CEO C B 0.2 Breakdown Voltage 0 0.001 0.01 0.1 1 10 0.00 1 0.01 0.1 1 10 Emitter-Base Breakdown V 5V I =100A, I =0 (BR)EBO E C Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off I 0.1 A V =40V, I =0 CBO CB E hFE v IC VBE(sat) v IC Current 10 A V =40V, T =100C CB amb Emitter Cut-Off Current I 0.1 A V =4V, I =0 EBO EB C 10 Collector-Emitter V 0.5 V I =1A, I =100mA* 1.8 CE(sat) C B Saturation Voltage 1.0 V I =2A, I =200mA* C B 1.6 Base-Emitter V 1.25 V I =1A, I =100mA* 1.4 BE(sat) C B 1 Saturation Voltage VCE=2V 1.2 1.0 Base-Emitter Turn-On V 1.0 V I =1A, V =2V* DC BE(on) C CE 1s 0.8 Voltage 100ms 0.1 10ms 1ms 0.6 100s Static Forward Current h 70 I =50mA, V =2V* FE C CE 0.4 Transfer Ratio 100 300 I =500mA, V =2V* C CE 80 I =1A, V =2V* 0.2 0.01 C CE 0.1 1 10 100 40 I =2A, V =2V* C CE 0.001 0.01 0.1 1 10 Transition f 150 MHz I =50mA, V =10V T C CE IC - Collector Current (Amps) Frequency f=100mHz VCE - Collector Emitter Voltage (V) Output Capacitance C 15 pF V =10V, f=1MHz obo CB VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 107 3 - 106 I -Collector Current (A)