A Product Line of
Diodes Incorporated
FMMT549 / FMMT549A
30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23
Features and Benefits Mechanical Data
Case: SOT23
BV > -30V
CEO
Maximum Continuous Collector Current I = -1A UL Flammability Rating 94V-0
C
500mW power dissipation
Case material: molded Plastic.
Complementary type:
Moisture Sensitivity: Level 1 per J-STD-020
o FMMT549 FMMT449
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
o FMMT549A N/A
Method 208
Lead Free, RoHS Compliant (Note 1)
Weight: 0.008 grams (Approximate)
Halogen and Antimony FreeGree Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
SOT23
C
B
E
Top View
Top View Device Symbol
Pin-Out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMT549TA 549 7 8 3,000
FMMT549ATA 59A 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc.`s Green Policy can be found on our website at
A Product Line of
Diodes Incorporated
FMMT549 / FMMT549A
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V -35 V
CBO
Collector-Emitter Voltage V -30 V
CEO
Emitter-Base Voltage V -5 V
EBO
Continuous Collector Current I -1 A
C
Peak Pulse Current I -2 A
CM
Base Current I -200 mA
B
Thermal Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P 500 mW
D
Thermal Resistance, Junction to Ambient (Note 4) 250 C/W
R
JA
Thermal Resistance, Junction to Lead (Note 5) 197 C/W
R
JL
Operating and Storage Temperature Range -55 to +150
T T C
J, STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV -35 - - V I = -100A
CBO C
Collector-Emitter Breakdown Voltage (Note 6) BV -30 - - V I = -10mA
CEO C
Emitter-Base Breakdown Voltage BV -5 - - V I = -100A
EBO E
- - -0.1 V = -30V
CB
Collector Cutoff Current A
I
CBO
- - -10 V = -30V, T = 100C
CB A
Emitter Cutoff Current I - - -0.1 A V = -4V
EBO EB
70 200 -
I = -50mA, V = -2V
C CE
80 130 - -
I = -1A, V = -2V
C CE
Static Forward Current Transfer Ratio (Note 6) 40 80 -
h I = -2A, V = -2V
FE C CE
FMMT549 100 160 300 -
I = -500mA, V = -2V
C CE
FMMT549A 150 200 500 - I = -500mA, V = -2V
C CE
- -250 -500 I = - 1A, I = -100mA
C B
mV
Collector-Emitter Saturation Voltage V - -500 -750 I = - 2A, I = -200mA
CE(sat) C B
FMMT549A - - -300 mV I = -100mA, I = -1mA
C B
Base-Emitter Saturation Voltage (Note 6) V - -900 -1250 mV I = -1A, I = -100mA
BE(sat) C B
Base-Emitter Turn-On Voltage (Note 6) V - -850 -1000 mV I = -1A, V = -2V
BE(on) C CE
Output Capacitance - - 25 pF
C V = -10V, f = 1MHz
obo CB
V = -5V, I = -100mA,
CE C
Transition Frequency f 100 - - MHz
T
f = 100MHz
t - 50 - ns I = -500mA, V = -10V
on C CC
Switching Times
t - 300 - ns I = I = -50mA
off B1 B2
Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
6. Measured under pulsed conditions. Pulse width 300 s. Duty cycle 2%
2 of 5 September 2011
FMMT549 / FMMT549A
Diodes Incorporated
www.diodes.com
Document Number: DS33098 Rev. 4 - 2