FMMT560 Diodes Incorporated

SOT23 PNP SILICON PLANAR FMMT560 HIGH VOLTAGE TRANSISTOR ISSUE 1 NOVEMBER 1998 FEATURES * Excellent h characterisristics up to I =50mA FE C * Low Saturation voltages E C PARTMARKING DETAIL 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -500 V CBO Collector-Emitter Voltage V -500 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -500 mA CM Continuous Collector Current I -150 mA C Power Dissipation P 500 mW tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -500 V I =-100A (BR)CBO C Voltage Collector-Emitter Breakdown V -500 V I =-10mA* BR(CEO) C Voltage Emitter-Base Breakdown Voltage V -5 V I =-100A (BR)EBO E Collector Cut-Off Current I I -100 nA V =-500V V =-500V CBO CES CB CE Emitter Cut-Off Current I -100 nA V =-5V EBO EB Collector-Emitter Saturation V -0.2 V I =-20mA, I =-2mA * CE(sat) C B Voltage -0.5 V I =-50mA, I =-10mA * C B Base-Emitter V -0.9 V I =-50mA, I =-10mA * BE(sat) C B Saturation Voltage Base-Emitter Turn On Voltage V -0.9 V I =-50mA, V =-10V * BE(on) C CE Static Forward Current Transfer h 100 300 I =-1mA, V =-10V FE C CE Ratio 80 300 I =-50mA, V =-10V * C CE 15 typ I =-100mA, V =-10V* C CE Transition Frequency f 60 MHz V =-20V, I =-10mA, T CE C f=50MHz Output Capacitance C 8pF V =-20V, f=1MHz obo CB Switching times t 110 typ. ns V =-100V, I =-50mA, on CE C t 1.5 typ. s I =-5mA, I =10mA off B1 B2 * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%FMMT560 TYPICAL CHARACTERISTICS 0.8 +25C IC/IB=10 1.6 0.6 1.2 -55C IC/IB=10 +25C IC/IB=20 0.4 +100C 0.8 IC/IB=50 +150C 0.2 0.4 0 0 1m 10m 100m 1m 10m 100m IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 1.0 IC/IB=10 VCE=5V 240 0.8 +100C 0.6 160 +25C 0.4 -55C 80 +25C +100C -55C 0.2 +150C 0 0 1m 10m 100m 1m 10m 100m 1 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.0 1 0.75 0.1 0.5 DC -55C 1s 0.01 +25C 100ms 0.25 +100C 10ms +150C 1ms 100s 0 0.001 1m 10m 100m 1 10 100 1000 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area