FMMT617TA Diodes Incorporated

FMMT617TA electronic component of Diodes Incorporated
FMMT617TA Diodes Incorporated
FMMT617TA Bipolar Transistors - BJT
FMMT617TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FMMT617TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT617TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FMMT617TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN SuperSOT
Datasheet: FMMT617TA Datasheet (PDF)
Price (USD)
5: USD 0.301 ea
Line Total: USD 1.5 
Availability : 4840
  
Ship by Fri. 28 Nov to Thu. 04 Dec
QtyUnit Price
5$ 0.301
50$ 0.2354
150$ 0.1554
500$ 0.1162
3000$ 0.1057
6000$ 0.0995

Availability 2360
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1178
Multiples : 1
QtyUnit Price
1178$ 0.2208
1288$ 0.202


Availability 2910
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1924
6000$ 0.1625
24000$ 0.1255


Availability 16705
Ship by Wed. 26 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7875
10$ 0.5012
100$ 0.3185
500$ 0.2343
1000$ 0.2222
3000$ 0.1892
6000$ 0.1738
24000$ 0.1705


Availability 711
Ship by Wed. 26 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.63
10$ 0.4774
83$ 0.2324
226$ 0.2198
3000$ 0.2114


Availability 4840
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.301
50$ 0.2354
150$ 0.1554
500$ 0.1162
3000$ 0.1057
6000$ 0.0995


Availability 646020
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1838


Availability 2360
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1183
Multiples : 1
QtyUnit Price
1183$ 0.2198


Availability 2910
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1913
6000$ 0.1625
24000$ 0.1255

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMMT617TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT617TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The FMMT617TA with Bipolar Transistors - BJT NPN SuperSOT is a part manufactured by Diodes Incorporated. This part is a low power NPN bipolar transistor with a SuperSOT-6 package. It has an integrated collector-emitter saturation voltage of 1.2V at IC=100mA and a collector-emitter saturation voltage of 400mV at IC=10mA. Its DC current gain (hFE) has a minimum value of 1000 at IC=10mA and a maximum value of 500 at IC=100mA. The transistor has a power dissipation of 625mW and a maximum operating temperature of +150°C. It is suitable for applications such as current limiting, linear amplification, switching, and low noise amplification.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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