A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data Case: SOT23 BV > -12V CEO I = -2.5A Continuous Collector Current Case Material: molded plastic, Green molding compound C I = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM Low Saturation Voltage E.g. -17mV Max I = -100mA. C Moisture Sensitivity: Level 1 per J-STD-020 R = 72m at 2.5A for a low equivalent on-resistance CE(sat) Terminals: Finish Matte Tin Plated Leads, Solderable per 625mW power dissipation MIL-STD-202, Method 208 h characterised up to -10A for high current gain hold-up FE Weight 0.008 grams (approximate) Complementary NPN Type: FMMT617 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Application Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Gate Driving MOSFETs and IGBTs PPAP capable (Note 4) Load switch Battery charging DC-DC conversion SOT23 E C C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT717TA AEC-Q101 717 7 8 3,000 FMMT717QTA Automotive 717 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated FMMT717 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -12 V V CBO Collector-Emitter Voltage -12 V V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -2.5 A C Peak Pulse Current I -10 A CM Base Current I -500 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 625 mW P D Power Dissipation (Note 7) 806 mW P D Thermal Resistance, Junction to Ambient (Note 6) 200 R C/W JA Thermal Resistance, Junction to Ambient (Note 7) R 155 C/W JA Thermal Resistance, Junction to Leads (Note 8) R 194 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as note 6, except the device is measured at t 5 sec. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 October 2012 FMMT717 Diodes Incorporated www.diodes.com Document Number: DS33116 Rev. 5 - 2