FZT1149ATA Diodes Incorporated

FZT1149ATA electronic component of Diodes Incorporated
FZT1149ATA Diodes Incorporated
FZT1149ATA Bipolar Transistors - BJT
FZT1149ATA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT1149ATA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT1149ATA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT1149ATA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN High Gain & Crnt
Datasheet: FZT1149ATA Datasheet (PDF)
Price (USD)
1: USD 1.35 ea
Line Total: USD 1.35 
Availability : 3234
  
Ship by Wed. 27 Aug to Fri. 29 Aug
QtyUnit Price
1$ 1.35
10$ 0.8148
100$ 0.4323
500$ 0.3762
1000$ 0.3443
2000$ 0.3289
5000$ 0.3289
10000$ 0.3212
25000$ 0.3157

Availability 3234
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.35
10$ 0.8148
100$ 0.4323
500$ 0.3762
1000$ 0.3443
2000$ 0.3289
5000$ 0.3289
10000$ 0.3212
25000$ 0.3157


Availability 853
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3472
10$ 1.089
30$ 0.721
100$ 0.5628
500$ 0.5115
1000$ 0.484


Availability 15520
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.3887


Availability 919
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 757
Multiples : 1
QtyUnit Price
757$ 0.3437

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT1149ATA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT1149ATA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The FZT1149ATA with Diodes Incorporated Bipolar Transistors – BJT NPN High Gain & Crnt is a high-reliability transistor specifically designed to cope with reverse bias emitter-base breakdown voltages up to 140V. This device is characterized by an excellent high-speed switching performance, low collector-emitter saturation voltage, and low on-state resistance. It has an asymptotic I ft of 25mA. It also features high gain up to 50 and a decent minimum current gain of 150. The power dissipation rating is up to 600mW at a collector current of 3A, and an operating junction temperature (TJ) of 150°C. This device was designed using a 6,000V dielectric isolation process with diode passivation to improve the power dissipation capabilities.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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